Largely variable electroluminescence efficiency with current and temperature in a blue (In, Ga)N multiple-quantum-well diode

Y. Yamane, K. Fujiwara, J. K. Sheu

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11 Citations (Scopus)

Abstract

Electroluminescence (EL) efficiency of a blue In0.3 Ga0.7 N multiple-quantum-well diode has been investigated as a function of current between 0.001 and 20 mA at various temperatures (20-300 K). The low-temperature EL quenching previously observed below 100 K at a driving current of 20 mA does not occur at 0.001 mA and is found to be strongly dependent on the current level. Largely variable temperature-dependent EL quantum efficiency with current suggests that the injected carrier capture efficiency by radiative recombination centers plays a decisive role for determination of the EL efficiency under the forward bias condition.

Original languageEnglish
Article number073501
JournalApplied Physics Letters
Volume91
Issue number7
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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