Lasing quantum well optoelectronic switch (QWOES) based on AlGaAs/GaAs/InGaAs double heterostructure

K. F. Yarn, Yeong-Her Wang, M. S. Chen

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A lasing quantum well optoelectronic switch (QWOES) based on a forward biased pn junction is demonstrated in an AlGaAs/GaAs/InGaAs double heierostructure. Excellent electrical switching characteristics with a high voltage control efficiency T), (= VS/VH) of 6.8 have been obtained when the device is operated in the dark. Typical OFF-state and ON-state resistances of 120kΩ and 25Ω. respectively, were obtained. The lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in an as-cleaved device are 210A/cm2. 0.4 mW/mA and 31.4%, respectively. The peak emission wavelength is centred at ~974nm.

Original languageEnglish
Pages (from-to)1063-1064
Number of pages2
JournalElectronics Letters
Volume31
Issue number13
DOIs
Publication statusPublished - 1995 Jun 22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Lasing quantum well optoelectronic switch (QWOES) based on AlGaAs/GaAs/InGaAs double heterostructure'. Together they form a unique fingerprint.

Cite this