Lateral transport in boron doped SiGe quantum wells

M. S. Kagan; I. V. Altukhov; K. A. Korolev; D. V. Orlov; V. P. Sinis; S. G. Thomas; K. L. Wang; K. Schmalz; I. N. Yassievich

doi:10.1006/spmi.1998.0638

Lateral transport in boron doped SiGe quantum wells

M. S. Kagan, I. V. Altukhov, K. A. Korolev, D. V. Orlov, V. P. Sinis, S. G. Thomas, K. L. Wang, K. Schmalz, I. N. Yassievich

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

Abstract

The temperature dependence of lateral conductivity and hole mobility in boron doped Si/SiGe/Si quantum well structures were studied. The conductivity at the temperatures below 20 K is shown to be due to hopping over B centers while at higher temperatures it is due to two-stage excitation consisting of thermal activation of holes from the ground to strain-split B states and the next hole tunneling into the valence band.

Original language	English
Pages (from-to)	203-206
Number of pages	4
Journal	Superlattices and Microstructures
Volume	25
Issue number	1-2
DOIs	https://doi.org/10.1006/spmi.1998.0638
Publication status	Published - 1999 Jan

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.1998.0638

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@article{a755cb9648e2458fbb48b25e095d0f27,

title = "Lateral transport in boron doped SiGe quantum wells",

abstract = "The temperature dependence of lateral conductivity and hole mobility in boron doped Si/SiGe/Si quantum well structures were studied. The conductivity at the temperatures below 20 K is shown to be due to hopping over B centers while at higher temperatures it is due to two-stage excitation consisting of thermal activation of holes from the ground to strain-split B states and the next hole tunneling into the valence band.",

author = "Kagan, {M. S.} and Altukhov, {I. V.} and Korolev, {K. A.} and Orlov, {D. V.} and Sinis, {V. P.} and Thomas, {S. G.} and Wang, {K. L.} and K. Schmalz and Yassievich, {I. N.}",

note = "Funding Information: Acknowledgements—This work was supported in part by Grants 96-02-17352 and 97-02-16820 from Russian Foundation for Basic Research and 97-10-55 from Russian Ministry of Science and Technology.",

year = "1999",

month = jan,

doi = "10.1006/spmi.1998.0638",

language = "English",

volume = "25",

pages = "203--206",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "1-2",

}

TY - JOUR

T1 - Lateral transport in boron doped SiGe quantum wells

AU - Kagan, M. S.

AU - Altukhov, I. V.

AU - Korolev, K. A.

AU - Orlov, D. V.

AU - Sinis, V. P.

AU - Thomas, S. G.

AU - Wang, K. L.

AU - Schmalz, K.

AU - Yassievich, I. N.

N1 - Funding Information: Acknowledgements—This work was supported in part by Grants 96-02-17352 and 97-02-16820 from Russian Foundation for Basic Research and 97-10-55 from Russian Ministry of Science and Technology.

PY - 1999/1

Y1 - 1999/1

N2 - The temperature dependence of lateral conductivity and hole mobility in boron doped Si/SiGe/Si quantum well structures were studied. The conductivity at the temperatures below 20 K is shown to be due to hopping over B centers while at higher temperatures it is due to two-stage excitation consisting of thermal activation of holes from the ground to strain-split B states and the next hole tunneling into the valence band.

AB - The temperature dependence of lateral conductivity and hole mobility in boron doped Si/SiGe/Si quantum well structures were studied. The conductivity at the temperatures below 20 K is shown to be due to hopping over B centers while at higher temperatures it is due to two-stage excitation consisting of thermal activation of holes from the ground to strain-split B states and the next hole tunneling into the valence band.

UR - http://www.scopus.com/inward/record.url?scp=0346335950&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0346335950&partnerID=8YFLogxK

U2 - 10.1006/spmi.1998.0638

DO - 10.1006/spmi.1998.0638

M3 - Article

AN - SCOPUS:0346335950

SN - 0749-6036

VL - 25

SP - 203

EP - 206

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1-2

ER -

Lateral transport in boron doped SiGe quantum wells

Abstract

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