The temperature dependence of lateral conductivity and hole mobility in boron doped Si/SiGe/Si quantum well structures were studied. The conductivity at the temperatures below 20 K is shown to be due to hopping over B centers while at higher temperatures it is due to two-stage excitation consisting of thermal activation of holes from the ground to strain-split B states and the next hole tunneling into the valence band.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering