Lateral transport in boron doped SiGe quantum wells

M. S. Kagan, I. V. Altukhov, K. A. Korolev, D. V. Orlov, V. P. Sinis, S. G. Thomas, K. L. Wang, K. Schmalz, I. N. Yassievich

Research output: Contribution to journalArticlepeer-review

Abstract

The temperature dependence of lateral conductivity and hole mobility in boron doped Si/SiGe/Si quantum well structures were studied. The conductivity at the temperatures below 20 K is shown to be due to hopping over B centers while at higher temperatures it is due to two-stage excitation consisting of thermal activation of holes from the ground to strain-split B states and the next hole tunneling into the valence band.

Original languageEnglish
Pages (from-to)203-206
Number of pages4
JournalSuperlattices and Microstructures
Volume25
Issue number1-2
DOIs
Publication statusPublished - 1999 Jan

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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