Abstract
We propose a simple method to fabricate laterally-grown ZnO-nanowire photodetectors on glass substrates. It was found that cutoff of the fabricated photodetector occurred at ∼360 nm with a transition region of only 30 nm. With an incident light wavelength of 350 nm and an applied bias of 0.1 V, it was found that measured responsivity of the photodetector was 6.04×10-3 A/W with an ultraviolet-to-visible rejection ratio larger than 600.
Original language | English |
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Pages (from-to) | 797-802 |
Number of pages | 6 |
Journal | Superlattices and Microstructures |
Volume | 46 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2009 Nov |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering