Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (Ga2O3) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN heterostructured-metal-ox-ide-semiconductors (MOSHEMTs). The double-channel was constructed by the polarized Al0.18Ga0.82N/GaN channel 1 and band discontinued lattice-matched Al0.83In0.17N/GaN channel 2. Be-cause of the superior gate control capability, the generally induced double-hump transconductance characteristics of double-channel MOSHEMTs were not obtained in the devices. The superior gate control capability was contributed by the side-wall electrical field modulation in the fin-channel. Owing to the high-insulating Ga2O3 gate oxide layer and the high-quality interface between the Ga2O3 and GaN layers, low noise power density of 8.7 ´ 10−14 Hz−1 and low Hooge’s coefficient of 6.25 ´ 10−6 of flicker noise were obtained. Furthermore, the devices had a unit gain cutoff frequency of 6.5 GHz and a maximal oscillation frequency of 12.6 GHz.
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics