Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots

Yin Sheng Tang; Simon E. Hicks; Chris D.W. Wilkinson; C. M. Sotomayor Torres; W. X. Ni; Jens Birch; J. B. Joelsson; Goeran V. Hansson; A. Kvick; K. L. Wang

doi:10.1117/12.273851

Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots

Yin Sheng Tang, Simon E. Hicks, Chris D.W. Wilkinson, C. M. Sotomayor Torres, W. X. Ni, Jens Birch, J. B. Joelsson, Goeran V. Hansson, A. Kvick, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

Arrays of 40 - 50 nm quantum dots were fabricated from Si- Si _1-xGe_x single quantum well and superlattice structures grown by molecular beam epitaxy. The dots showing strong luminescence were studied by synchrotron source x-ray diffraction. Some of the dots were coated with SiN_x films containing different build-in stresses. It was found that the luminescence intensity depends strongly on the amount of stress in the SiN_x coating, being strongest when the stress was close to zero. A strain symmetrization process occurred in the bright dots. Although an exact physical origin is not yet available, it is exciting that these quantum dot diodes work at room temperature and that the whole fabrication procedure is compatible with Si- technology.

Original language	English
Pages (from-to)	170-177
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3007
DOIs	https://doi.org/10.1117/12.273851
Publication status	Published - 1997
Event	Silicon-Based Monolithic and Hybrid Optoelectronic Devices - San Jose, CA, United States Duration: 1997 Feb 13 → 1997 Feb 13

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Cite this

@article{f027eaa032ba44d69f48b2ee3227bc4d,

title = "Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots",

abstract = "Arrays of 40 - 50 nm quantum dots were fabricated from Si- Si 1-xGex single quantum well and superlattice structures grown by molecular beam epitaxy. The dots showing strong luminescence were studied by synchrotron source x-ray diffraction. Some of the dots were coated with SiNx films containing different build-in stresses. It was found that the luminescence intensity depends strongly on the amount of stress in the SiNx coating, being strongest when the stress was close to zero. A strain symmetrization process occurred in the bright dots. Although an exact physical origin is not yet available, it is exciting that these quantum dot diodes work at room temperature and that the whole fabrication procedure is compatible with Si- technology.",

author = "Tang, {Yin Sheng} and Hicks, {Simon E.} and Wilkinson, {Chris D.W.} and {Sotomayor Torres}, {C. M.} and Ni, {W. X.} and Jens Birch and Joelsson, {J. B.} and Hansson, {Goeran V.} and A. Kvick and Wang, {K. L.}",

year = "1997",

doi = "10.1117/12.273851",

language = "English",

volume = "3007",

pages = "170--177",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Silicon-Based Monolithic and Hybrid Optoelectronic Devices ; Conference date: 13-02-1997 Through 13-02-1997",

}

TY - JOUR

T1 - Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots

AU - Tang, Yin Sheng

AU - Hicks, Simon E.

AU - Wilkinson, Chris D.W.

AU - Sotomayor Torres, C. M.

AU - Ni, W. X.

AU - Birch, Jens

AU - Joelsson, J. B.

AU - Hansson, Goeran V.

AU - Kvick, A.

AU - Wang, K. L.

PY - 1997

Y1 - 1997

N2 - Arrays of 40 - 50 nm quantum dots were fabricated from Si- Si 1-xGex single quantum well and superlattice structures grown by molecular beam epitaxy. The dots showing strong luminescence were studied by synchrotron source x-ray diffraction. Some of the dots were coated with SiNx films containing different build-in stresses. It was found that the luminescence intensity depends strongly on the amount of stress in the SiNx coating, being strongest when the stress was close to zero. A strain symmetrization process occurred in the bright dots. Although an exact physical origin is not yet available, it is exciting that these quantum dot diodes work at room temperature and that the whole fabrication procedure is compatible with Si- technology.

AB - Arrays of 40 - 50 nm quantum dots were fabricated from Si- Si 1-xGex single quantum well and superlattice structures grown by molecular beam epitaxy. The dots showing strong luminescence were studied by synchrotron source x-ray diffraction. Some of the dots were coated with SiNx films containing different build-in stresses. It was found that the luminescence intensity depends strongly on the amount of stress in the SiNx coating, being strongest when the stress was close to zero. A strain symmetrization process occurred in the bright dots. Although an exact physical origin is not yet available, it is exciting that these quantum dot diodes work at room temperature and that the whole fabrication procedure is compatible with Si- technology.

UR - http://www.scopus.com/inward/record.url?scp=0031359244&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031359244&partnerID=8YFLogxK

U2 - 10.1117/12.273851

DO - 10.1117/12.273851

M3 - Conference article

AN - SCOPUS:0031359244

SN - 0277-786X

VL - 3007

SP - 170

EP - 177

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Silicon-Based Monolithic and Hybrid Optoelectronic Devices

Y2 - 13 February 1997 through 13 February 1997

ER -

Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots

Abstract

All Science Journal Classification (ASJC) codes

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