The state dependence of leakage can be exploited to obtain modest leakage savings in complementary metal-oxide-semiconductor (CMOS) circuits, However, one can modify circuits considering state dependence and achieve larger savings. We identify a low-leakage state and insert leakage-control transistors only where needed. Leakage levels are on the order of 35% to 90% lower than those obtained by state dependence alone. Using a modified standard-cell-design flow, area overhead for combinational logic was found to be on the order of 18%. The proposed technique minimizes performance impact, does not require multiple-threshold voltages, and supports a standard-cell-design flow.
|Number of pages||5|
|Journal||IEEE Transactions on Very Large Scale Integration (VLSI) Systems|
|Publication status||Published - 2002 Feb 1|
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering