Light-bias coupling erase process for non-volatile zinc tin oxide TFT memory with a nickel nanocrystals charge trap layer

Jeng Ting Li, Li Chih Liu, Po Hsien Ke, Jen Sue Chen, Jiann Shing Jeng

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12 Citations (Scopus)

Abstract

A nonvolatile charge trapping memory is demonstrated on a thin film transistor (TFT) using a solution processed ultra-thin (∼7 nm) zinc tin oxide (ZTO) semiconductor layer with an Al2O3/Ni-nanocrystals (NCs)/SiO2 dielectric stack. A positive threshold voltage (VTH) shift of 7 V is achieved at gate programming voltage of 40 V for 1 s but the state will not be erased by applying negative gate voltage. However, the programmed VTH shift can be expediently erased by applying a gate voltage of -10 V in conjunction with visible light illumination for 1 s. It is found that the sub-threshold swing (SS) deteriorates slightly under light illumination, indicating that photo-ionized oxygen vacancies (Vo+ and/or Vo++) are trapped at the interface between Al2O3 and ZTO, which assists the capture of electrons discharged from the Ni NCs charge trapping layer. The light-bias coupling action and the role of ultra-thin ZTO thickness are discussed to elucidate the efficient erasing mechanism.

Original languageEnglish
Article number115104
JournalJournal of Physics D: Applied Physics
Volume49
Issue number11
DOIs
Publication statusPublished - 2016 Feb 11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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