Light-bias interaction of zinc-Tin oxide (ZTO) thin film transistor for charge-Trapping memory application

Jen-Sue Chen, Jeng Ting Li, Li Chih Liu, Po Hsien Ke, Jiann Shing Jeng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we report the program-erase operation of a nonvolatile charge trapping memory base on a thin film transistor. The transistor is composed of an ultra-Thin zinc tin oxide (ZTO) semiconductor layer and an Al2O3/Ni-nanocrystals/SiO2 dielectric stack. The threshold voltage (VTh), sub-Threshold swing, ION/IOFF ratio of the as-fabricated device are 1.8 V, 0.40 V/decade and ∼107, respectively. By applying a gate voltage of 40 V for 1s, the VTh shifts positively and is named the programmed state. The programmed VTh shift can be back-shifted by applying a gate voltage of -10 V with monochromatic light source of wavelengths (405, 532, 635 nm), the erasing is most effective at wavelength of 635 nm. Subsequently, it is found that the programmed state can be expediently erased by applying a gate voltage of -10 V with a visible light illumination for 1 s. Erasing process can also be done by visible light illumination only, but is not as efficient. The light-erasable memory can be integrated into low power consumption display devices owing to its light-sensing switching characteristics.

Original languageEnglish
Title of host publicationAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages62-65
Number of pages4
ISBN (Electronic)9784990875336
Publication statusPublished - 2017 Aug 8
Event24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan
Duration: 2017 Jul 42017 Jul 7

Publication series

NameAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Other

Other24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
CountryJapan
CityKyoto
Period17-07-0417-07-07

Fingerprint

Charge trapping
Thin film transistors
Zinc oxide
Tin oxides
Oxide films
Data storage equipment
Electric potential
Lighting
Wavelength
Monochromators
Threshold voltage
Nanocrystals
Transistors
Electric power utilization
Display devices

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computational Theory and Mathematics

Cite this

Chen, J-S., Li, J. T., Liu, L. C., Ke, P. H., & Jeng, J. S. (2017). Light-bias interaction of zinc-Tin oxide (ZTO) thin film transistor for charge-Trapping memory application. In AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings (pp. 62-65). [8006077] (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc..
Chen, Jen-Sue ; Li, Jeng Ting ; Liu, Li Chih ; Ke, Po Hsien ; Jeng, Jiann Shing. / Light-bias interaction of zinc-Tin oxide (ZTO) thin film transistor for charge-Trapping memory application. AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 62-65 (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).
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abstract = "In this work, we report the program-erase operation of a nonvolatile charge trapping memory base on a thin film transistor. The transistor is composed of an ultra-Thin zinc tin oxide (ZTO) semiconductor layer and an Al2O3/Ni-nanocrystals/SiO2 dielectric stack. The threshold voltage (VTh), sub-Threshold swing, ION/IOFF ratio of the as-fabricated device are 1.8 V, 0.40 V/decade and ∼107, respectively. By applying a gate voltage of 40 V for 1s, the VTh shifts positively and is named the programmed state. The programmed VTh shift can be back-shifted by applying a gate voltage of -10 V with monochromatic light source of wavelengths (405, 532, 635 nm), the erasing is most effective at wavelength of 635 nm. Subsequently, it is found that the programmed state can be expediently erased by applying a gate voltage of -10 V with a visible light illumination for 1 s. Erasing process can also be done by visible light illumination only, but is not as efficient. The light-erasable memory can be integrated into low power consumption display devices owing to its light-sensing switching characteristics.",
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Chen, J-S, Li, JT, Liu, LC, Ke, PH & Jeng, JS 2017, Light-bias interaction of zinc-Tin oxide (ZTO) thin film transistor for charge-Trapping memory application. in AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8006077, AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 62-65, 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017, Kyoto, Japan, 17-07-04.

Light-bias interaction of zinc-Tin oxide (ZTO) thin film transistor for charge-Trapping memory application. / Chen, Jen-Sue; Li, Jeng Ting; Liu, Li Chih; Ke, Po Hsien; Jeng, Jiann Shing.

AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 62-65 8006077 (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Light-bias interaction of zinc-Tin oxide (ZTO) thin film transistor for charge-Trapping memory application

AU - Chen, Jen-Sue

AU - Li, Jeng Ting

AU - Liu, Li Chih

AU - Ke, Po Hsien

AU - Jeng, Jiann Shing

PY - 2017/8/8

Y1 - 2017/8/8

N2 - In this work, we report the program-erase operation of a nonvolatile charge trapping memory base on a thin film transistor. The transistor is composed of an ultra-Thin zinc tin oxide (ZTO) semiconductor layer and an Al2O3/Ni-nanocrystals/SiO2 dielectric stack. The threshold voltage (VTh), sub-Threshold swing, ION/IOFF ratio of the as-fabricated device are 1.8 V, 0.40 V/decade and ∼107, respectively. By applying a gate voltage of 40 V for 1s, the VTh shifts positively and is named the programmed state. The programmed VTh shift can be back-shifted by applying a gate voltage of -10 V with monochromatic light source of wavelengths (405, 532, 635 nm), the erasing is most effective at wavelength of 635 nm. Subsequently, it is found that the programmed state can be expediently erased by applying a gate voltage of -10 V with a visible light illumination for 1 s. Erasing process can also be done by visible light illumination only, but is not as efficient. The light-erasable memory can be integrated into low power consumption display devices owing to its light-sensing switching characteristics.

AB - In this work, we report the program-erase operation of a nonvolatile charge trapping memory base on a thin film transistor. The transistor is composed of an ultra-Thin zinc tin oxide (ZTO) semiconductor layer and an Al2O3/Ni-nanocrystals/SiO2 dielectric stack. The threshold voltage (VTh), sub-Threshold swing, ION/IOFF ratio of the as-fabricated device are 1.8 V, 0.40 V/decade and ∼107, respectively. By applying a gate voltage of 40 V for 1s, the VTh shifts positively and is named the programmed state. The programmed VTh shift can be back-shifted by applying a gate voltage of -10 V with monochromatic light source of wavelengths (405, 532, 635 nm), the erasing is most effective at wavelength of 635 nm. Subsequently, it is found that the programmed state can be expediently erased by applying a gate voltage of -10 V with a visible light illumination for 1 s. Erasing process can also be done by visible light illumination only, but is not as efficient. The light-erasable memory can be integrated into low power consumption display devices owing to its light-sensing switching characteristics.

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M3 - Conference contribution

AN - SCOPUS:85034440660

T3 - AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

SP - 62

EP - 65

BT - AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Chen J-S, Li JT, Liu LC, Ke PH, Jeng JS. Light-bias interaction of zinc-Tin oxide (ZTO) thin film transistor for charge-Trapping memory application. In AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 62-65. 8006077. (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).