AlGalnP light-emitting diodes (LEDs) with electroplated nickel substrate have been successfully fabricated. The AlGalnP LEDs were initially grown on a GaAs temporary substrate. After removing or thinning the GaAs substrate and coating a AuGe layer, a 60 μm thick nickel layer was electroplated on the AuGe surface serving as the substrate. The results show that the electroplated nickel substrate is effective in the thermal dissipation capability and reflectivity. As compared to LEDs with a GaAs substrate, an increase in the light output by up to 88% has been obtained. Additionally, the proposed method is so reliable that light output degradation was less than 10% after 1500 h operation at 60 °C and 50 mA.
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2005 Nov 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering