The incorporation of omni directional reflectors into a semiconductor Light Emitting Diode (LED) was discussed. The omni directional mirror comprises the semiconductor, a metal layer and an intermediate low index dielectric layer of about quarter-wave thickness. The dielectric layer was penetrated by ana array of metallic micro-contacts for enabling electrical conductivity of the reflector structure. It was shown that the optical properties of the ODR exceeded the reflection properties of metals.
|Number of pages||3|
|Journal||OSA Trends in Optics and Photonics Series|
|Publication status||Published - 2003 Jan 1|
|Event||Conference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States|
Duration: 2003 Jun 1 → 2003 Jun 6
All Science Journal Classification (ASJC) codes