Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes

Ching Ting Lee, Ying Hung Chou, Jheng Tai Yan, Hsin Ying Lee

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6 Citations (Scopus)


The aluminum (Al)-doped ZnO (AZO) films embedded with Al nanoclusters were employed to enhance the light output power of III-nitride-based light-emitting diodes (LEDs). The ZnO and Al targets were sputtered using a magnetron cosputtering system. Al nanoclusters embedded in AZO films were found in the AZO films deposited with Al dc power of 10 W and ZnO rf power of 100 W using high resolution transmission electron microscopy. An increase of 20% in the light output power of the GaN-based LEDs with AZO films embedded with Al nanoclusters can be obtained compared to the conventional LEDs operated at 500 mA.

Original languageEnglish
Pages (from-to)1901-1903
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
Publication statusPublished - 2009 Aug 14


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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