Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes

Ching Ting Lee; Ying Hung Chou; Jheng Tai Yan; Hsin Ying Lee

doi:10.1116/1.3167370

Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes

Ching Ting Lee, Ying Hung Chou, Jheng Tai Yan, Hsin Ying Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The aluminum (Al)-doped ZnO (AZO) films embedded with Al nanoclusters were employed to enhance the light output power of III-nitride-based light-emitting diodes (LEDs). The ZnO and Al targets were sputtered using a magnetron cosputtering system. Al nanoclusters embedded in AZO films were found in the AZO films deposited with Al dc power of 10 W and ZnO rf power of 100 W using high resolution transmission electron microscopy. An increase of 20% in the light output power of the GaN-based LEDs with AZO films embedded with Al nanoclusters can be obtained compared to the conventional LEDs operated at 500 mA.

Original language	English
Pages (from-to)	1901-1903
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	4
DOIs	https://doi.org/10.1116/1.3167370
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.3167370

Cite this

@article{90771b1bd1b94e18860106253b8c29c1,

title = "Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes",

abstract = "The aluminum (Al)-doped ZnO (AZO) films embedded with Al nanoclusters were employed to enhance the light output power of III-nitride-based light-emitting diodes (LEDs). The ZnO and Al targets were sputtered using a magnetron cosputtering system. Al nanoclusters embedded in AZO films were found in the AZO films deposited with Al dc power of 10 W and ZnO rf power of 100 W using high resolution transmission electron microscopy. An increase of 20% in the light output power of the GaN-based LEDs with AZO films embedded with Al nanoclusters can be obtained compared to the conventional LEDs operated at 500 mA.",

author = "Lee, {Ching Ting} and Chou, {Ying Hung} and Yan, {Jheng Tai} and Lee, {Hsin Ying}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China, Advanced Optoelectronic Technology Center, and the Center for Micro/Nano Science and Technology for the National Cheng Kung University.",

year = "2009",

doi = "10.1116/1.3167370",

language = "English",

volume = "27",

pages = "1901--1903",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes

AU - Lee, Ching Ting

AU - Chou, Ying Hung

AU - Yan, Jheng Tai

AU - Lee, Hsin Ying

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China, Advanced Optoelectronic Technology Center, and the Center for Micro/Nano Science and Technology for the National Cheng Kung University.

PY - 2009

Y1 - 2009

N2 - The aluminum (Al)-doped ZnO (AZO) films embedded with Al nanoclusters were employed to enhance the light output power of III-nitride-based light-emitting diodes (LEDs). The ZnO and Al targets were sputtered using a magnetron cosputtering system. Al nanoclusters embedded in AZO films were found in the AZO films deposited with Al dc power of 10 W and ZnO rf power of 100 W using high resolution transmission electron microscopy. An increase of 20% in the light output power of the GaN-based LEDs with AZO films embedded with Al nanoclusters can be obtained compared to the conventional LEDs operated at 500 mA.

AB - The aluminum (Al)-doped ZnO (AZO) films embedded with Al nanoclusters were employed to enhance the light output power of III-nitride-based light-emitting diodes (LEDs). The ZnO and Al targets were sputtered using a magnetron cosputtering system. Al nanoclusters embedded in AZO films were found in the AZO films deposited with Al dc power of 10 W and ZnO rf power of 100 W using high resolution transmission electron microscopy. An increase of 20% in the light output power of the GaN-based LEDs with AZO films embedded with Al nanoclusters can be obtained compared to the conventional LEDs operated at 500 mA.

UR - http://www.scopus.com/inward/record.url?scp=68349133809&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68349133809&partnerID=8YFLogxK

U2 - 10.1116/1.3167370

DO - 10.1116/1.3167370

M3 - Article

AN - SCOPUS:68349133809

SN - 1071-1023

VL - 27

SP - 1901

EP - 1903

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this