Light extraction efficiency in III-nitride LEDs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Light extraction efficiency (LEE) of GaN-based LEDs is limits mainly by the high refractive index of GaN. We will introduce methods proposed previously and present new methods to further enhance LEE of GaN-based LEDs.

Original languageEnglish
Title of host publicationAsia Communications and Photonics Conference, ACP 2012
Publication statusPublished - 2012 Dec 1
EventAsia Communications and Photonics Conference, ACP 2012 - Guangzhou, China
Duration: 2012 Nov 72012 Nov 10

Publication series

NameAsia Communications and Photonics Conference, ACP 2012

Other

OtherAsia Communications and Photonics Conference, ACP 2012
CountryChina
CityGuangzhou
Period12-11-0712-11-10

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Chang, S-J. (2012). Light extraction efficiency in III-nitride LEDs. In Asia Communications and Photonics Conference, ACP 2012 (Asia Communications and Photonics Conference, ACP 2012).