Light extraction enhancement of GaN-based light-emitting diodes using crown-shaped patterned sapphire substrates

Ching Hsueh Chiu, Lung Hsing Hsu, Chia Yu Lee, Chien Chung Lin, Bo Wen Lin, Shang Ju Tu, Yan Hao Chen, Che Yu Liu, Wen Ching Hsu, Yu Pin Lan, Jinn Kong Sheu, Tien Chang Lu, Gou Chung Chi, Hao Chung Kuo, Shing Chung Wang, Chun Yen Chang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

In this letter, we report the high performance GaN-based light-emitting diodes (LEDs) with embedded air void array grown by metal-organic chemical vapor deposition. The donut-shaped air void was formed at the interface between crown-shaped patterned sapphire substrates (CPSS) and the GaN epilayer by conventional photolithography. The transmission electron microscopy images demonstrate that the threading dislocations were significantly suppressed by epitaxial lateral overgrowth (ELOG). The Monte Carlo ray-tracing simulation reveals that the light extraction of the air-voids embedded LED was dramatically increased due to a strong light reflection and redirection by the air voids.

Original languageEnglish
Article number6188511
Pages (from-to)1212-1214
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number14
DOIs
Publication statusPublished - 2012 Jun 20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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