Light Guide for Pixel Crosstalk Improvement in Deep Submicron CMOS Image Sensor

T. H. Hsu, Y. K. Fang, Yu-Cheng Lin, S. F. Chen, C. S. Lin, D. N. Yaung, S. G. Wuu, H. C. Chien, C. H. Tseng, J. S. Lin, C. S. Wang

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Light guide, a novel dielectric structure consisting of PE-Oxide and FSG-Oxide, has been developed to reduce crosstalk in 0.18-μm CMOS image sensor technology. Due to the difference in refraction index (1.46 for PE-Oxide and 1.435 for FSG-Oxide), major part of the incident light can be totally reflected at the interface of PE-Oxide/FSG-Oxide, as the incidence angle is larger than total reflection angle. With this light guide, the pixel sensing capability can be enhanced and to reduce pixel crosstalk. Small pixels with pitch 3.0-μm and 4.0-μm have been characterized and examined. In 3. 0-μm pixel, optical crosstalk achieves 30% reduction for incidence angle of light at 10°.

Original languageEnglish
Pages (from-to)22-24
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number1
DOIs
Publication statusPublished - 2004 Jan 1
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Hsu, T. H., Fang, Y. K., Lin, Y-C., Chen, S. F., Lin, C. S., Yaung, D. N., Wuu, S. G., Chien, H. C., Tseng, C. H., Lin, J. S., & Wang, C. S. (2004). Light Guide for Pixel Crosstalk Improvement in Deep Submicron CMOS Image Sensor. IEEE Electron Device Letters, 25(1), 22-24. https://doi.org/10.1109/LED.2003.821597