Light sensing in photosensitive, flexible n-type organic thin-film transistors

Wei Yang Chou, Yi Sheng Lin, Ling Ling Kuo, Shyh Jiun Liu, Horng Long Cheng, Fu Ching Tang

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


Control of the operating voltage in organic thin-film transistor (OTFT) based photosensors is a very important issue, which can effectively enhance photosensitivity by reducing the contribution of the field-effect current to the output current under darkness. In this study, we show a highly sensitive flexible organic photosensor, which is made by the use of cross-linked poly(4-vinylphenol) as a polymer dielectric layer and N,N′-ditridecyl-3,4, 9,10-perylenetetracarboxylic diimide (PTCDI-C13H27) as an n-type active layer on a transparent polyethersulfone (PES) substrate, by tuning both source-drain and source-gate voltages to around the threshold voltage (Vt = 3.0 V). Interestingly, a maximum photocurrent/dark current ratio was obtained when the operating voltage was reduced to around V t. The time-response characteristics and sensitivity of the PTCDI-C13H27-based photosensor were investigated. Considerable interest has been focused on developing a flexible in-cell remote touch screen that should comprise photosensitive OTFTs and switch OTFTs simultaneously. In this work, both switch-OTFTs and photo-OTFTs can be formed on the flexible PES substrate by use of the same fabrication process. The electrical characteristics of switch-OTFTs under bending states are discussed in terms of photoluminescence and time-resolved photoluminescence measurements, as well as quantum theory calculations.

Original languageEnglish
Pages (from-to)626-632
Number of pages7
JournalJournal of Materials Chemistry C
Issue number4
Publication statusPublished - 2014 Jan 28

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Materials Chemistry


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