Light sensing in photosensitive, flexible n-type organic thin-film transistors

Wei Yang Chou, Yi Sheng Lin, Ling Ling Kuo, Shyh Jiun Liu, Horng Long Cheng, Fu Ching Tang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Control of the operating voltage in organic thin-film transistor (OTFT) based photosensors is a very important issue, which can effectively enhance photosensitivity by reducing the contribution of the field-effect current to the output current under darkness. In this study, we show a highly sensitive flexible organic photosensor, which is made by the use of cross-linked poly(4-vinylphenol) as a polymer dielectric layer and N,N′-ditridecyl-3,4, 9,10-perylenetetracarboxylic diimide (PTCDI-C13H27) as an n-type active layer on a transparent polyethersulfone (PES) substrate, by tuning both source-drain and source-gate voltages to around the threshold voltage (Vt = 3.0 V). Interestingly, a maximum photocurrent/dark current ratio was obtained when the operating voltage was reduced to around V t. The time-response characteristics and sensitivity of the PTCDI-C13H27-based photosensor were investigated. Considerable interest has been focused on developing a flexible in-cell remote touch screen that should comprise photosensitive OTFTs and switch OTFTs simultaneously. In this work, both switch-OTFTs and photo-OTFTs can be formed on the flexible PES substrate by use of the same fabrication process. The electrical characteristics of switch-OTFTs under bending states are discussed in terms of photoluminescence and time-resolved photoluminescence measurements, as well as quantum theory calculations.

Original languageEnglish
Pages (from-to)626-632
Number of pages7
JournalJournal of Materials Chemistry C
Volume2
Issue number4
DOIs
Publication statusPublished - 2014 Jan 28

Fingerprint

Thin film transistors
Switches
Photoluminescence
Electric potential
Touch screens
Photosensitivity
Quantum theory
Dark currents
Substrates
Photocurrents
Threshold voltage
Polymers
Tuning
Fabrication
polyether sulfone

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Chou, Wei Yang ; Lin, Yi Sheng ; Kuo, Ling Ling ; Liu, Shyh Jiun ; Cheng, Horng Long ; Tang, Fu Ching. / Light sensing in photosensitive, flexible n-type organic thin-film transistors. In: Journal of Materials Chemistry C. 2014 ; Vol. 2, No. 4. pp. 626-632.
@article{80ba0184f7be48b1b67805357d1aec76,
title = "Light sensing in photosensitive, flexible n-type organic thin-film transistors",
abstract = "Control of the operating voltage in organic thin-film transistor (OTFT) based photosensors is a very important issue, which can effectively enhance photosensitivity by reducing the contribution of the field-effect current to the output current under darkness. In this study, we show a highly sensitive flexible organic photosensor, which is made by the use of cross-linked poly(4-vinylphenol) as a polymer dielectric layer and N,N′-ditridecyl-3,4, 9,10-perylenetetracarboxylic diimide (PTCDI-C13H27) as an n-type active layer on a transparent polyethersulfone (PES) substrate, by tuning both source-drain and source-gate voltages to around the threshold voltage (Vt = 3.0 V). Interestingly, a maximum photocurrent/dark current ratio was obtained when the operating voltage was reduced to around V t. The time-response characteristics and sensitivity of the PTCDI-C13H27-based photosensor were investigated. Considerable interest has been focused on developing a flexible in-cell remote touch screen that should comprise photosensitive OTFTs and switch OTFTs simultaneously. In this work, both switch-OTFTs and photo-OTFTs can be formed on the flexible PES substrate by use of the same fabrication process. The electrical characteristics of switch-OTFTs under bending states are discussed in terms of photoluminescence and time-resolved photoluminescence measurements, as well as quantum theory calculations.",
author = "Chou, {Wei Yang} and Lin, {Yi Sheng} and Kuo, {Ling Ling} and Liu, {Shyh Jiun} and Cheng, {Horng Long} and Tang, {Fu Ching}",
year = "2014",
month = "1",
day = "28",
doi = "10.1039/c3tc31966k",
language = "English",
volume = "2",
pages = "626--632",
journal = "Journal of Materials Chemistry C",
issn = "2050-7526",
publisher = "Royal Society of Chemistry",
number = "4",

}

Light sensing in photosensitive, flexible n-type organic thin-film transistors. / Chou, Wei Yang; Lin, Yi Sheng; Kuo, Ling Ling; Liu, Shyh Jiun; Cheng, Horng Long; Tang, Fu Ching.

In: Journal of Materials Chemistry C, Vol. 2, No. 4, 28.01.2014, p. 626-632.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Light sensing in photosensitive, flexible n-type organic thin-film transistors

AU - Chou, Wei Yang

AU - Lin, Yi Sheng

AU - Kuo, Ling Ling

AU - Liu, Shyh Jiun

AU - Cheng, Horng Long

AU - Tang, Fu Ching

PY - 2014/1/28

Y1 - 2014/1/28

N2 - Control of the operating voltage in organic thin-film transistor (OTFT) based photosensors is a very important issue, which can effectively enhance photosensitivity by reducing the contribution of the field-effect current to the output current under darkness. In this study, we show a highly sensitive flexible organic photosensor, which is made by the use of cross-linked poly(4-vinylphenol) as a polymer dielectric layer and N,N′-ditridecyl-3,4, 9,10-perylenetetracarboxylic diimide (PTCDI-C13H27) as an n-type active layer on a transparent polyethersulfone (PES) substrate, by tuning both source-drain and source-gate voltages to around the threshold voltage (Vt = 3.0 V). Interestingly, a maximum photocurrent/dark current ratio was obtained when the operating voltage was reduced to around V t. The time-response characteristics and sensitivity of the PTCDI-C13H27-based photosensor were investigated. Considerable interest has been focused on developing a flexible in-cell remote touch screen that should comprise photosensitive OTFTs and switch OTFTs simultaneously. In this work, both switch-OTFTs and photo-OTFTs can be formed on the flexible PES substrate by use of the same fabrication process. The electrical characteristics of switch-OTFTs under bending states are discussed in terms of photoluminescence and time-resolved photoluminescence measurements, as well as quantum theory calculations.

AB - Control of the operating voltage in organic thin-film transistor (OTFT) based photosensors is a very important issue, which can effectively enhance photosensitivity by reducing the contribution of the field-effect current to the output current under darkness. In this study, we show a highly sensitive flexible organic photosensor, which is made by the use of cross-linked poly(4-vinylphenol) as a polymer dielectric layer and N,N′-ditridecyl-3,4, 9,10-perylenetetracarboxylic diimide (PTCDI-C13H27) as an n-type active layer on a transparent polyethersulfone (PES) substrate, by tuning both source-drain and source-gate voltages to around the threshold voltage (Vt = 3.0 V). Interestingly, a maximum photocurrent/dark current ratio was obtained when the operating voltage was reduced to around V t. The time-response characteristics and sensitivity of the PTCDI-C13H27-based photosensor were investigated. Considerable interest has been focused on developing a flexible in-cell remote touch screen that should comprise photosensitive OTFTs and switch OTFTs simultaneously. In this work, both switch-OTFTs and photo-OTFTs can be formed on the flexible PES substrate by use of the same fabrication process. The electrical characteristics of switch-OTFTs under bending states are discussed in terms of photoluminescence and time-resolved photoluminescence measurements, as well as quantum theory calculations.

UR - http://www.scopus.com/inward/record.url?scp=84890826733&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890826733&partnerID=8YFLogxK

U2 - 10.1039/c3tc31966k

DO - 10.1039/c3tc31966k

M3 - Article

AN - SCOPUS:84890826733

VL - 2

SP - 626

EP - 632

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 4

ER -