Linear and enhanced transconductance using high-medium-low doped channel

Wen Shiung Lour, Wen Chau Liu, Jung Hui Tsai, Lih Wen Laih

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report linear, enhanced transconductance by high-medium-low doped-channel FET. A low-doped layer together with n+and p+layers establishes high-performance camel diode, which exhibits a high effective potential barrier of 蠑 1.0 V and a gate-drain breakdwon voltage of around 21 V (at Ig= 1.0 mA/mm). Whereas the transition and the thin, high-doped layers used to enhance transconductance and to improve device linearity. A 1.5×100 μm2camel-diode gate FET (CAMFET) has a peak transconductance of 220 mS/mm and a current density of 蠑 800 mA/mm. On the other hand, the device has a transconductance of more than 80 percent of the peak value over a wide drain current range of 160 to 800 mA/mm. The improvement of device linearity and the enhancement of current density suggest that high-medium-low doped channel for a CAMFET is suitable for high power large signal circuit applications.

Original languageEnglish
Title of host publicationESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference
EditorsHenk C. de Graaff, Henk C. de Graaff, Herma van Kranenburg
PublisherIEEE Computer Society
Pages177-180
Number of pages4
ISBN (Electronic)286332182X
ISBN (Print)9782863321829
Publication statusPublished - 1995 Jan 1
Event25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands
Duration: 1995 Sep 251995 Sep 27

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other25th European Solid State Device Research Conference, ESSDERC 1995
Country/TerritoryNetherlands
CityThe Hague
Period95-09-2595-09-27

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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