Linear and enhanced transconductance using high-medium-low doped channel

Wen Shiung Lour, Wen Chau Liu, Jung Hui Tsai, Lih Wen Laih

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We report linear, enhanced transconductance by high-medium-low doped-channel FET. A low-doped layer together with n+and p+layers establishes high-performance camel diode, which exhibits a high effective potential barrier of 蠑 1.0 V and a gate-drain breakdwon voltage of around 21 V (at Ig= 1.0 mA/mm). Whereas the transition and the thin, high-doped layers used to enhance transconductance and to improve device linearity. A 1.5×100 μm2camel-diode gate FET (CAMFET) has a peak transconductance of 220 mS/mm and a current density of 蠑 800 mA/mm. On the other hand, the device has a transconductance of more than 80 percent of the peak value over a wide drain current range of 160 to 800 mA/mm. The improvement of device linearity and the enhancement of current density suggest that high-medium-low doped channel for a CAMFET is suitable for high power large signal circuit applications.

Original languageEnglish
Title of host publicationESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference
EditorsHenk C. de Graaff, Henk C. de Graaff, Herma van Kranenburg
PublisherIEEE Computer Society
Number of pages4
ISBN (Electronic)286332182X
ISBN (Print)9782863321829
Publication statusPublished - 1995 Jan 1
Event25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands
Duration: 1995 Sep 251995 Sep 27

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876


Other25th European Solid State Device Research Conference, ESSDERC 1995
CityThe Hague

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality


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