Linear and enhanced transconductance using high-medium-low doped channel

Wen Shiung Lour, Wen-Chau Liu, Jung Hui Tsai, Lih Wen Laih

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report linear, enhanced transconductance by high-medium-low doped-channel FET. A low-doped layer together with n+and p+layers establishes high-performance camel diode, which exhibits a high effective potential barrier of 蠑 1.0 V and a gate-drain breakdwon voltage of around 21 V (at Ig= 1.0 mA/mm). Whereas the transition and the thin, high-doped layers used to enhance transconductance and to improve device linearity. A 1.5×100 μm2camel-diode gate FET (CAMFET) has a peak transconductance of 220 mS/mm and a current density of 蠑 800 mA/mm. On the other hand, the device has a transconductance of more than 80 percent of the peak value over a wide drain current range of 160 to 800 mA/mm. The improvement of device linearity and the enhancement of current density suggest that high-medium-low doped channel for a CAMFET is suitable for high power large signal circuit applications.

Original languageEnglish
Title of host publicationESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference
EditorsHenk C. de Graaff, Henk C. de Graaff, Herma van Kranenburg
PublisherIEEE Computer Society
Pages177-180
Number of pages4
ISBN (Electronic)286332182X
ISBN (Print)9782863321829
Publication statusPublished - 1995 Jan 1
Event25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands
Duration: 1995 Sep 251995 Sep 27

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other25th European Solid State Device Research Conference, ESSDERC 1995
CountryNetherlands
CityThe Hague
Period95-09-2595-09-27

Fingerprint

Transconductance
Field effect transistors
Diodes
Current density
Drain current
Networks (circuits)
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Lour, W. S., Liu, W-C., Tsai, J. H., & Laih, L. W. (1995). Linear and enhanced transconductance using high-medium-low doped channel. In H. C. de Graaff, H. C. de Graaff, & H. van Kranenburg (Eds.), ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference (pp. 177-180). [5435978] (European Solid-State Device Research Conference). IEEE Computer Society.
Lour, Wen Shiung ; Liu, Wen-Chau ; Tsai, Jung Hui ; Laih, Lih Wen. / Linear and enhanced transconductance using high-medium-low doped channel. ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. editor / Henk C. de Graaff ; Henk C. de Graaff ; Herma van Kranenburg. IEEE Computer Society, 1995. pp. 177-180 (European Solid-State Device Research Conference).
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abstract = "We report linear, enhanced transconductance by high-medium-low doped-channel FET. A low-doped layer together with n+and p+layers establishes high-performance camel diode, which exhibits a high effective potential barrier of 蠑 1.0 V and a gate-drain breakdwon voltage of around 21 V (at Ig= 1.0 mA/mm). Whereas the transition and the thin, high-doped layers used to enhance transconductance and to improve device linearity. A 1.5×100 μm2camel-diode gate FET (CAMFET) has a peak transconductance of 220 mS/mm and a current density of 蠑 800 mA/mm. On the other hand, the device has a transconductance of more than 80 percent of the peak value over a wide drain current range of 160 to 800 mA/mm. The improvement of device linearity and the enhancement of current density suggest that high-medium-low doped channel for a CAMFET is suitable for high power large signal circuit applications.",
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Lour, WS, Liu, W-C, Tsai, JH & Laih, LW 1995, Linear and enhanced transconductance using high-medium-low doped channel. in HC de Graaff, HC de Graaff & H van Kranenburg (eds), ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference., 5435978, European Solid-State Device Research Conference, IEEE Computer Society, pp. 177-180, 25th European Solid State Device Research Conference, ESSDERC 1995, The Hague, Netherlands, 95-09-25.

Linear and enhanced transconductance using high-medium-low doped channel. / Lour, Wen Shiung; Liu, Wen-Chau; Tsai, Jung Hui; Laih, Lih Wen.

ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. ed. / Henk C. de Graaff; Henk C. de Graaff; Herma van Kranenburg. IEEE Computer Society, 1995. p. 177-180 5435978 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - We report linear, enhanced transconductance by high-medium-low doped-channel FET. A low-doped layer together with n+and p+layers establishes high-performance camel diode, which exhibits a high effective potential barrier of 蠑 1.0 V and a gate-drain breakdwon voltage of around 21 V (at Ig= 1.0 mA/mm). Whereas the transition and the thin, high-doped layers used to enhance transconductance and to improve device linearity. A 1.5×100 μm2camel-diode gate FET (CAMFET) has a peak transconductance of 220 mS/mm and a current density of 蠑 800 mA/mm. On the other hand, the device has a transconductance of more than 80 percent of the peak value over a wide drain current range of 160 to 800 mA/mm. The improvement of device linearity and the enhancement of current density suggest that high-medium-low doped channel for a CAMFET is suitable for high power large signal circuit applications.

AB - We report linear, enhanced transconductance by high-medium-low doped-channel FET. A low-doped layer together with n+and p+layers establishes high-performance camel diode, which exhibits a high effective potential barrier of 蠑 1.0 V and a gate-drain breakdwon voltage of around 21 V (at Ig= 1.0 mA/mm). Whereas the transition and the thin, high-doped layers used to enhance transconductance and to improve device linearity. A 1.5×100 μm2camel-diode gate FET (CAMFET) has a peak transconductance of 220 mS/mm and a current density of 蠑 800 mA/mm. On the other hand, the device has a transconductance of more than 80 percent of the peak value over a wide drain current range of 160 to 800 mA/mm. The improvement of device linearity and the enhancement of current density suggest that high-medium-low doped channel for a CAMFET is suitable for high power large signal circuit applications.

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Lour WS, Liu W-C, Tsai JH, Laih LW. Linear and enhanced transconductance using high-medium-low doped channel. In de Graaff HC, de Graaff HC, van Kranenburg H, editors, ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. IEEE Computer Society. 1995. p. 177-180. 5435978. (European Solid-State Device Research Conference).