Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mndoped GaN intermediate band photodetection

Feng Wen Huang, Jinn Kong Sheu, Ming Lun Lee, Shang Ju Tu, Wei Chih Lai, Wen Che Tsai, Wen Hao Chang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Up-converted heterostructures with a Mn-doped GaN intermediate band photodetection layer and an InGaN/GaN multiple quantum well (MQW) luminescence layer grown by metal-organic vaporphase epitaxy are demonstrated. The up-converters exhibit a significant upconverted photoluminescence (UPL) signal. Power-dependent UPL and spectral responses indicate that the UPL emission is due to photo-carrier injection from the Mn-doped GaN layer into InGaN/GaN MQWs. Photons convert from 2.54 to 2.99 eV via a single-photon absorption process to exhibit a linear up-conversion photon energy of 450 meV without applying bias voltage. Therefore, the up-conversion process could be interpreted within the uncomplicated energy level model.

Original languageEnglish
Pages (from-to)A1211-A1218
JournalOptics Express
Volume19
Issue number106
DOIs
Publication statusPublished - 2011 Nov 7

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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