Liquid phase chemical-enhanced oxidation for GaAs operated near room temperature

Hwei Heng Wang, Chien Jung Huang, Yeong Her Wang, Mau Phon Houng

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54 Citations (Scopus)


A new chemical enhanced oxidation method for gallium arsenide (GaAs) in liquid phase near room temperature (40°C-70°C) is proposed and investigated. Featureless oxide layers with good uniformity and reliability can be grown efficiently on GaAS without any extra energy source. A relatively high oxidation rate (≃1000 Å/h), about 50 times higher than that obtained during oxidation in boiling water has been realized. Based on the results of X-ray photoelectron spectroscopy (XPS), excellent chemical stability after thermal annealing as well as good chemical stoichiometry have been realized. The oxide was determined to be composed of Ga2O3 and As2O3.

Original languageEnglish
Pages (from-to)L67-L70
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number1 PART A/B
Publication statusPublished - 1998 Jan 15

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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