A new chemical enhanced oxidation method for gallium arsenide (GaAs) in liquid phase near room temperature (40°C-70°C) is proposed and investigated. Featureless oxide layers with good uniformity and reliability can be grown efficiently on GaAS without any extra energy source. A relatively high oxidation rate (≃1000 Å/h), about 50 times higher than that obtained during oxidation in boiling water has been realized. Based on the results of X-ray photoelectron spectroscopy (XPS), excellent chemical stability after thermal annealing as well as good chemical stoichiometry have been realized. The oxide was determined to be composed of Ga2O3 and As2O3.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||1 PART A/B|
|Publication status||Published - 1998 Jan 15|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)