Liquid-phase-deposited SiO2 on AlGaAs and its application

Kuan Wei Lee, Jung Sheng Huang, Yu Lin Lu, Fang Ming Lee, Hsien Cheng Lin, Jian Jun Huang, Yeong Her Wang

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4 Citations (Scopus)

Abstract

The silicon dioxide (SiO2) on AlGaAs prepared by liquid phase deposition (LPD) at 40 °C has been explored. The LPD-SiO2 film deposition rate is about 67 nm h-1 for the first hour. The leakage current density is about 1.21 × 10-6 A cm-2 at 1 MV cm-1. The interface trap density (Dit) and the flat-band voltage shift (ΔVFB) are 1.28 × 1012 cm -2 eV-1 and 0.5 V, respectively. After rapid thermal annealing in the N2 ambient at 300 °C for 1 min, the leakage current density, Dit, and ΔVFB can be improved to 4.24 × 10-7 A cm-2 at 1 MV cm-1, 1.7 × 1011 cm-2 eV-1, and 0.2 V, respectively. Finally, this study demonstrates the application of the LPD-SiO2 film to the AlGaAs/InGaAs pseudomorphic high-electron- mobility transistor.

Original languageEnglish
Article number055006
JournalSemiconductor Science and Technology
Volume26
Issue number5
DOIs
Publication statusPublished - 2011 Apr 5

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Lee, K. W., Huang, J. S., Lu, Y. L., Lee, F. M., Lin, H. C., Huang, J. J., & Wang, Y. H. (2011). Liquid-phase-deposited SiO2 on AlGaAs and its application. Semiconductor Science and Technology, 26(5), [055006]. https://doi.org/10.1088/0268-1242/26/5/055006