Liquid phase deposited SiO2 on GaN

H. R. Wu, K. W. Lee, T. B. Nian, D. W. Chou, J. J. Huang Wu, Y. H. Wang, M. P. Houng, P. W. Sze, Y. K. Su, S. J. Chang, C. H. Ho, C. I. Chiang, Y. T. Chern, F. S. Juang, T. C. Wen, W. I. Lee, J. I. Chyi

Research output: Contribution to journalArticle

22 Citations (Scopus)


An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO2 films will be characterized.

Original languageEnglish
Pages (from-to)329-333
Number of pages5
JournalMaterials Chemistry and Physics
Issue number1
Publication statusPublished - 2003 Apr 29


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Wu, H. R., Lee, K. W., Nian, T. B., Chou, D. W., Huang Wu, J. J., Wang, Y. H., Houng, M. P., Sze, P. W., Su, Y. K., Chang, S. J., Ho, C. H., Chiang, C. I., Chern, Y. T., Juang, F. S., Wen, T. C., Lee, W. I., & Chyi, J. I. (2003). Liquid phase deposited SiO2 on GaN. Materials Chemistry and Physics, 80(1), 329-333.