@article{d0e21a43ba9d49819618e65a3666e853,
title = "Liquid phase deposited SiO2 on GaN",
abstract = "An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO2 films will be characterized.",
author = "Wu, {H. R.} and Lee, {K. W.} and Nian, {T. B.} and Chou, {D. W.} and {Huang Wu}, {J. J.} and Wang, {Y. H.} and Houng, {M. P.} and Sze, {P. W.} and Su, {Y. K.} and Chang, {S. J.} and Ho, {C. H.} and Chiang, {C. I.} and Chern, {Y. T.} and Juang, {F. S.} and Wen, {T. C.} and Lee, {W. I.} and Chyi, {J. I.}",
note = "Funding Information: This work was supported in part by the National Science Council of Republic of China under the contracts No: NSC90-2215-E-006-013, NSC91-2215-E006-017, NSC91-2215-E244-001 and A-91-E-FA08-1-4. Thanks are to the support from Chen Jieh-Chen Scholarship Foundation, Tainan, Taiwan.",
year = "2003",
month = apr,
day = "29",
doi = "10.1016/S0254-0584(02)00504-7",
language = "English",
volume = "80",
pages = "329--333",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier BV",
number = "1",
}