An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO2 films will be characterized.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics