Liquid phase oxidation for InGaP/GaAs HBT passivation

Po Wen Sze, Kuan Wei Lee, Jian Jiun Huang, Nan Ying Yang, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Native oxide films grown near room temperature by liquid phase oxidation (LPO) on p+-GaAs, n-InGaAs and n-InGaP are investigated. Their applications to heterojunction bipolar transistors (HBTs) are also demonstrated and characterized. With the LPO as surface passivation, the dc current gain β of the HBT devices increases sevenfold in low collector current regimes, and it also shows wider collector regimes from 8.3 × 10-11 A to 0.1 A. In addition, a larger breakdown voltage and lower surface recombination current can be obtained. This provides the possibility of promising implementations in low-power electronics and communication applications. Comparisons between devices with LPO passivation and those with sulfur treatment on the InGaP/GaAs HBTs are also discussed.

Original languageEnglish
Article number030
Pages (from-to)1160-1166
Number of pages7
JournalSemiconductor Science and Technology
Issue number8
Publication statusPublished - 2006 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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