TY - GEN
T1 - Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess
AU - Lee, Kuan Wei
AU - Lin, Hsien Chang
AU - Lee, Kai Lin
AU - Wang, Yeong Her
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.
AB - Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.
UR - http://www.scopus.com/inward/record.url?scp=60649114151&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=60649114151&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2008.4734823
DO - 10.1109/ICSICT.2008.4734823
M3 - Conference contribution
AN - SCOPUS:60649114151
SN - 9781424421855
T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
SP - 1437
EP - 1439
BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Y2 - 20 October 2008 through 23 October 2008
ER -