Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess

Kuan Wei Lee, Hsien Chang Lin, Kai Lin Lee, Yeong-Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages1437-1439
Number of pages3
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: 2008 Oct 202008 Oct 23

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period08-10-2008-10-23

Fingerprint

recesses
high electron mobility transistors
metal oxide semiconductors
liquid phases
masks
Metals
High electron mobility transistors
Oxidation
oxidation
Masks
Liquids
photoresists
passivity
oxide films
Photoresists
Passivation
Oxides
Oxide films
oxides
metals

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Lee, K. W., Lin, H. C., Lee, K. L., & Wang, Y-H. (2008). Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 1437-1439). [4734823] (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734823
Lee, Kuan Wei ; Lin, Hsien Chang ; Lee, Kai Lin ; Wang, Yeong-Her. / Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. pp. 1437-1439 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).
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title = "Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess",
abstract = "Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.",
author = "Lee, {Kuan Wei} and Lin, {Hsien Chang} and Lee, {Kai Lin} and Yeong-Her Wang",
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Lee, KW, Lin, HC, Lee, KL & Wang, Y-H 2008, Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734823, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 1437-1439, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 08-10-20. https://doi.org/10.1109/ICSICT.2008.4734823

Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess. / Lee, Kuan Wei; Lin, Hsien Chang; Lee, Kai Lin; Wang, Yeong-Her.

ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1437-1439 4734823 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess

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N2 - Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.

AB - Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.

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Lee KW, Lin HC, Lee KL, Wang Y-H. Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1437-1439. 4734823. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734823