Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess

Kuan Wei Lee, Hsien Chang Lin, Kai Lin Lee, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages1437-1439
Number of pages3
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: 2008 Oct 202008 Oct 23

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period08-10-2008-10-23

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess'. Together they form a unique fingerprint.

Cite this