Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess

Kuan Wei Lee; Hsien Chang Lin; Kai Lin Lee; Yeong Her Wang

doi:10.1109/ICSICT.2008.4734823

Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess

Kuan Wei Lee, Hsien Chang Lin, Kai Lin Lee, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.

Original language	English
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages	1437-1439
Number of pages	3
DOIs	https://doi.org/10.1109/ICSICT.2008.4734823
Publication status	Published - 2008 Dec 1
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 2008 Oct 20 → 2008 Oct 23

Publication series

Name	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country	China
City	Beijing
Period	08-10-20 → 08-10-23

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

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Lee, K. W., Lin, H. C., Lee, K. L., & Wang, Y. H. (2008). Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 1437-1439). [4734823] (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734823

Lee, Kuan Wei ; Lin, Hsien Chang ; Lee, Kai Lin ; Wang, Yeong Her. / Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. pp. 1437-1439 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

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title = "Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess",

abstract = "Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.",

author = "Lee, {Kuan Wei} and Lin, {Hsien Chang} and Lee, {Kai Lin} and Wang, {Yeong Her}",

year = "2008",

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pages = "1437--1439",

booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",

note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",

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Lee, KW, Lin, HC, Lee, KL & Wang, YH 2008, Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734823, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 1437-1439, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 08-10-20. https://doi.org/10.1109/ICSICT.2008.4734823

Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess. / Lee, Kuan Wei; Lin, Hsien Chang; Lee, Kai Lin; Wang, Yeong Her.

ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1437-1439 4734823 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess

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N2 - Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.

AB - Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.

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Lee KW, Lin HC, Lee KL, Wang YH. Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1437-1439. 4734823. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734823