Abstract
Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.
| Original language | English |
|---|---|
| Title of host publication | ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings |
| Pages | 1437-1439 |
| Number of pages | 3 |
| DOIs | |
| Publication status | Published - 2008 Dec 1 |
| Event | 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 2008 Oct 20 → 2008 Oct 23 |
Publication series
| Name | International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT |
|---|
Other
| Other | 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 |
|---|---|
| Country | China |
| City | Beijing |
| Period | 08-10-20 → 08-10-23 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
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Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess. / Lee, Kuan Wei; Lin, Hsien Chang; Lee, Kai Lin; Wang, Yeong-Her.
ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1437-1439 4734823 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess
AU - Lee, Kuan Wei
AU - Lin, Hsien Chang
AU - Lee, Kai Lin
AU - Wang, Yeong-Her
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.
AB - Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.
UR - http://www.scopus.com/inward/record.url?scp=60649114151&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=60649114151&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2008.4734823
DO - 10.1109/ICSICT.2008.4734823
M3 - Conference contribution
SN - 9781424421855
T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
SP - 1437
EP - 1439
BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
ER -