The properties of the native oxides on GaAs-based materials will be characterized. The n-channel depletion-mode GaAs MOSFETs with the liquid phase oxidized gate will be fabricated and characterized. The primary results show the stability and potential of the liquid phase oxidation method for the applications to GaAs-based devices. In addition, a new planarized shallow trench isolation technique, a simple self-align process and an oxidized AlGaAs gate for GaAs-based device's applications using liquid phase oxidation method will be demonstrated.
|Number of pages||6|
|Publication status||Published - 2004 Dec 1|
|Event||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China|
Duration: 2004 Oct 18 → 2004 Oct 21
|Other||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004|
|Period||04-10-18 → 04-10-21|
All Science Journal Classification (ASJC) codes