Liquid phase oxidation on GaAs-based materials and the applications

Research output: Contribution to conferencePaper

Abstract

The properties of the native oxides on GaAs-based materials will be characterized. The n-channel depletion-mode GaAs MOSFETs with the liquid phase oxidized gate will be fabricated and characterized. The primary results show the stability and potential of the liquid phase oxidation method for the applications to GaAs-based devices. In addition, a new planarized shallow trench isolation technique, a simple self-align process and an oxidized AlGaAs gate for GaAs-based device's applications using liquid phase oxidation method will be demonstrated.

Original languageEnglish
Pages2291-2296
Number of pages6
Publication statusPublished - 2004 Dec 1
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 2004 Oct 182004 Oct 21

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period04-10-1804-10-21

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Wang, Y. H. (2004). Liquid phase oxidation on GaAs-based materials and the applications. 2291-2296. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.