TY - GEN
T1 - Liquid phase oxidation on GaAs-based transistor applications
AU - Wang, Yeong Her
AU - Lee, Kuan Wei
PY - 2006/1/1
Y1 - 2006/1/1
N2 - The GaAs-based MOS-HEMT with oxide as the gate dielectric and HBTs with surface passivation prepared by liquid phase oxidation has been successfully demonstrated. As compared to its counterpart HEMTs, the larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages make the proposed technique suitable for power device applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.
AB - The GaAs-based MOS-HEMT with oxide as the gate dielectric and HBTs with surface passivation prepared by liquid phase oxidation has been successfully demonstrated. As compared to its counterpart HEMTs, the larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages make the proposed technique suitable for power device applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.
UR - http://www.scopus.com/inward/record.url?scp=34547288063&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547288063&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2006.306527
DO - 10.1109/ICSICT.2006.306527
M3 - Conference contribution
SN - 1424401615
SN - 9781424401611
T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
SP - 849
EP - 852
BT - ICSICT-2006
PB - IEEE Computer Society
T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Y2 - 23 October 2006 through 26 October 2006
ER -