Liquid phase oxidation on GaAs-based transistor applications

Yeong-Her Wang, Kuan Wei Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The GaAs-based MOS-HEMT with oxide as the gate dielectric and HBTs with surface passivation prepared by liquid phase oxidation has been successfully demonstrated. As compared to its counterpart HEMTs, the larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages make the proposed technique suitable for power device applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages849-852
Number of pages4
DOIs
Publication statusPublished - 2007 Aug 2
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2006 Oct 232006 Oct 26

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period06-10-2306-10-26

Fingerprint

Heterojunction bipolar transistors
High electron mobility transistors
Electric breakdown
Passivation
Transistors
Oxidation
Oxides
Gate dielectrics
Liquids
Leakage currents
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Wang, Y-H., & Lee, K. W. (2007). Liquid phase oxidation on GaAs-based transistor applications. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 849-852). [4098254] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2006.306527
Wang, Yeong-Her ; Lee, Kuan Wei. / Liquid phase oxidation on GaAs-based transistor applications. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2007. pp. 849-852 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).
@inproceedings{0cb23f681c344b9b993bb15c7ebbd16c,
title = "Liquid phase oxidation on GaAs-based transistor applications",
abstract = "The GaAs-based MOS-HEMT with oxide as the gate dielectric and HBTs with surface passivation prepared by liquid phase oxidation has been successfully demonstrated. As compared to its counterpart HEMTs, the larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages make the proposed technique suitable for power device applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.",
author = "Yeong-Her Wang and Lee, {Kuan Wei}",
year = "2007",
month = "8",
day = "2",
doi = "10.1109/ICSICT.2006.306527",
language = "English",
isbn = "1424401615",
series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
pages = "849--852",
booktitle = "ICSICT-2006",

}

Wang, Y-H & Lee, KW 2007, Liquid phase oxidation on GaAs-based transistor applications. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098254, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 849-852, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 06-10-23. https://doi.org/10.1109/ICSICT.2006.306527

Liquid phase oxidation on GaAs-based transistor applications. / Wang, Yeong-Her; Lee, Kuan Wei.

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2007. p. 849-852 4098254 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Liquid phase oxidation on GaAs-based transistor applications

AU - Wang, Yeong-Her

AU - Lee, Kuan Wei

PY - 2007/8/2

Y1 - 2007/8/2

N2 - The GaAs-based MOS-HEMT with oxide as the gate dielectric and HBTs with surface passivation prepared by liquid phase oxidation has been successfully demonstrated. As compared to its counterpart HEMTs, the larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages make the proposed technique suitable for power device applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.

AB - The GaAs-based MOS-HEMT with oxide as the gate dielectric and HBTs with surface passivation prepared by liquid phase oxidation has been successfully demonstrated. As compared to its counterpart HEMTs, the larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages make the proposed technique suitable for power device applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.

UR - http://www.scopus.com/inward/record.url?scp=34547288063&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547288063&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2006.306527

DO - 10.1109/ICSICT.2006.306527

M3 - Conference contribution

SN - 1424401615

SN - 9781424401611

T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 849

EP - 852

BT - ICSICT-2006

ER -

Wang Y-H, Lee KW. Liquid phase oxidation on GaAs-based transistor applications. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2007. p. 849-852. 4098254. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2006.306527