Liquid phase oxidation on GaAs-based transistor applications

Yeong Her Wang, Kuan Wei Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The GaAs-based MOS-HEMT with oxide as the gate dielectric and HBTs with surface passivation prepared by liquid phase oxidation has been successfully demonstrated. As compared to its counterpart HEMTs, the larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages make the proposed technique suitable for power device applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages849-852
Number of pages4
ISBN (Print)1424401615, 9781424401611
DOIs
Publication statusPublished - 2006 Jan 1
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2006 Oct 232006 Oct 26

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period06-10-2306-10-26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Liquid phase oxidation on GaAs-based transistor applications'. Together they form a unique fingerprint.

Cite this