Liquid phase oxidation on inaias and application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate

Kuan Wei Lee, Hsien Chang Lin, Ja Hong Hsieh, Yu Chun Cheng, Yeong-Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The selective oxidation on InAIAs by liquid phase oxidation using photoresist or metal as a mask is proposed. Further application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate is also conducted. The high mobility electrons are constrained in 2DEG instead of traditional oxide-semiconductor interface. Also, this oxidation provides new opportunities to explore many alternative dielectrics for use as gate oxides and as passivation layers on III-V compound semiconductor devices.

Original languageEnglish
Title of host publication2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
Duration: 2008 May 252008 May 29

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
CountryFrance
CityVersailles
Period08-05-2508-05-29

Fingerprint

High electron mobility transistors
Oxidation
Liquids
Substrates
Two dimensional electron gas
Electron mobility
Photoresists
Semiconductor devices
Passivation
Oxides
Masks
Metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lee, K. W., Lin, H. C., Hsieh, J. H., Cheng, Y. C., & Wang, Y-H. (2008). Liquid phase oxidation on inaias and application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate. In 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 [4702901] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2008.4702901
Lee, Kuan Wei ; Lin, Hsien Chang ; Hsieh, Ja Hong ; Cheng, Yu Chun ; Wang, Yeong-Her. / Liquid phase oxidation on inaias and application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate. 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008. 2008. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).
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abstract = "The selective oxidation on InAIAs by liquid phase oxidation using photoresist or metal as a mask is proposed. Further application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate is also conducted. The high mobility electrons are constrained in 2DEG instead of traditional oxide-semiconductor interface. Also, this oxidation provides new opportunities to explore many alternative dielectrics for use as gate oxides and as passivation layers on III-V compound semiconductor devices.",
author = "Lee, {Kuan Wei} and Lin, {Hsien Chang} and Hsieh, {Ja Hong} and Cheng, {Yu Chun} and Yeong-Her Wang",
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Lee, KW, Lin, HC, Hsieh, JH, Cheng, YC & Wang, Y-H 2008, Liquid phase oxidation on inaias and application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate. in 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008., 4702901, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008, Versailles, France, 08-05-25. https://doi.org/10.1109/ICIPRM.2008.4702901

Liquid phase oxidation on inaias and application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate. / Lee, Kuan Wei; Lin, Hsien Chang; Hsieh, Ja Hong; Cheng, Yu Chun; Wang, Yeong-Her.

2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008. 2008. 4702901 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Lee, Kuan Wei

AU - Lin, Hsien Chang

AU - Hsieh, Ja Hong

AU - Cheng, Yu Chun

AU - Wang, Yeong-Her

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N2 - The selective oxidation on InAIAs by liquid phase oxidation using photoresist or metal as a mask is proposed. Further application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate is also conducted. The high mobility electrons are constrained in 2DEG instead of traditional oxide-semiconductor interface. Also, this oxidation provides new opportunities to explore many alternative dielectrics for use as gate oxides and as passivation layers on III-V compound semiconductor devices.

AB - The selective oxidation on InAIAs by liquid phase oxidation using photoresist or metal as a mask is proposed. Further application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate is also conducted. The high mobility electrons are constrained in 2DEG instead of traditional oxide-semiconductor interface. Also, this oxidation provides new opportunities to explore many alternative dielectrics for use as gate oxides and as passivation layers on III-V compound semiconductor devices.

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Lee KW, Lin HC, Hsieh JH, Cheng YC, Wang Y-H. Liquid phase oxidation on inaias and application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate. In 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008. 2008. 4702901. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2008.4702901