Liquid phase oxidation on inaias and application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate

Kuan Wei Lee, Hsien Chang Lin, Ja Hong Hsieh, Yu Chun Cheng, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The selective oxidation on InAIAs by liquid phase oxidation using photoresist or metal as a mask is proposed. Further application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate is also conducted. The high mobility electrons are constrained in 2DEG instead of traditional oxide-semiconductor interface. Also, this oxidation provides new opportunities to explore many alternative dielectrics for use as gate oxides and as passivation layers on III-V compound semiconductor devices.

Original languageEnglish
Title of host publication2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
Duration: 2008 May 252008 May 29

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
CountryFrance
CityVersailles
Period08-05-2508-05-29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Lee, K. W., Lin, H. C., Hsieh, J. H., Cheng, Y. C., & Wang, Y. H. (2008). Liquid phase oxidation on inaias and application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate. In 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 [4702901] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2008.4702901