Liquid phase oxidation on InGaP and its application to InGaP/GaAs HBTs surface passivation

Kuan Wei Lee, Nan Ying Yang, Kai Lin Lee, Po Wen Sze, Mau-phon Houng, Yeong-Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A liquid phase oxidation to grow native oxide film on InGaP near room temperature is investigated and characterized. The application as the surface passivation to improve the InGaP/GaAs heterojunction bipolar transistors (HBTs) performance is also demonstrated. In this work, the HBT devices with surface passivation by the native oxide exhibit 700% improvement in current gain at low collector current regimes by the reduction of surface recombination current, as compared to those without surface passivation. In addition, a larger breakdown voltage (23.5 V) and a lower base recombination current (10-12 A) are also obtained.

Original languageEnglish
Title of host publication2005 International Conference on Indium Phosphide and Related Materials
Pages516-519
Number of pages4
DOIs
Publication statusPublished - 2005 Dec 1
Event2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom
Duration: 2005 May 82005 May 12

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
Volume2005
ISSN (Print)1092-8669

Other

Other2005 International Conference on Indium Phosphide and Related Materials
CountryUnited Kingdom
CityGlasgow, Scotland
Period05-05-0805-05-12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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