@inproceedings{34058b3d7247437d917644f08f7f0c46,
title = "Liquid phase oxidation on InGaP and its application to InGaP/GaAs HBTs surface passivation",
abstract = "A liquid phase oxidation to grow native oxide film on InGaP near room temperature is investigated and characterized. The application as the surface passivation to improve the InGaP/GaAs heterojunction bipolar transistors (HBTs) performance is also demonstrated. In this work, the HBT devices with surface passivation by the native oxide exhibit 700% improvement in current gain at low collector current regimes by the reduction of surface recombination current, as compared to those without surface passivation. In addition, a larger breakdown voltage (23.5 V) and a lower base recombination current (10-12 A) are also obtained.",
author = "Lee, {Kuan Wei} and Yang, {Nan Ying} and Lee, {Kai Lin} and Sze, {Po Wen} and Houng, {Mau Phon} and Wang, {Yeong Her}",
year = "2005",
doi = "10.1109/ICIPRM.2005.1517546",
language = "English",
isbn = "0780388917",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "516--519",
booktitle = "2005 International Conference on Indium Phosphide and Related Materials",
note = "2005 International Conference on Indium Phosphide and Related Materials ; Conference date: 08-05-2005 Through 12-05-2005",
}