The effect of CuO addition on the microstructures and the microwave dielectric properties of (Zr0.8,Sn0.2)TiO4 ceramics have been investigated. It is found that low-level doping of ZnO (1 wt%) and CuO (up to 2 wt%) can significantly improve the density and dielectric properties of (Zr0.8,Sn0.2)TiO4 ceramics. (Zr0.8,Sn0.2)TiO4 ceramics with additives could be sintered to a theoretical density higher than 96% at 1220 °C, due to the liquid phase effect of CuO addition, as observed by scanning electron microscopy (SEM). A secondary phase was not observed at the level of 0.5-2 wt% CuO addition. The dielectric constant (εr). While the temperature coefficient of resonant frequency (τf) were not significantly affected, the unloaded quality factors Q were effectively promoted by CuO addition. An εr value of 38, Q·f value of 50000 (at 7 GHz), and τf value of 3 ppm/°C were obtained for 1 wt% ZnO doped (Zr0.8,Sn0.2)TiO4 ceramics with 1 wt% CuO addition sintered at 1220 °C.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering