TY - JOUR
T1 - Lithium-Induced Defect Levels in ZnO Nanoparticles to Facilitate Electron Transport in Inverted Organic Photovoltaics
AU - Cheng, Wen Hui
AU - Chiou, Jau Wern
AU - Tsai, Meng Yen
AU - Jeng, Jiann Shing
AU - Chen, Jen Sue
AU - Hsu, Steve Lien Chung
AU - Chou, Wei Yang
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/7/21
Y1 - 2016/7/21
N2 - In this work, lithium-doped zinc oxide nanoparticles (LZO NPs) with different Li/Zn molar ratios (Li/Zn = 0, 0.05, 0.2) are successfully prepared to form an electron transporting layer (cathode buffer layer) in the inverted-type P3HT:ICBA organic photovoltaic (OPV) devices. As compared with the undoped ZnO NPs buffer layer, a considerable improvement OPVs from 2.344% to 2.946% is obtained by using 5%-LZO NPs as a buffer layer, which owns Jsc of 7.22 mA/cm2, Voc of 0.86 V, and FF of 47.4%. X-ray absorption near-edge structure (XANES) spectra show the increase of unoccupied O 2p-derived states in 5%-LZO NPs, which leads to better carrier conductance. The energy levels of defects in 5%-LZO NPs analyzed by photoluminescence are found to facilitate electron extraction to the cathode. Impedance measurement results indicate that the carrier lifetime is effectively increased to 2176 μs by applying the 5%-LZO NPs buffer layer, showing the improvement of carrier extraction efficiency and resulting in its progressive performance.
AB - In this work, lithium-doped zinc oxide nanoparticles (LZO NPs) with different Li/Zn molar ratios (Li/Zn = 0, 0.05, 0.2) are successfully prepared to form an electron transporting layer (cathode buffer layer) in the inverted-type P3HT:ICBA organic photovoltaic (OPV) devices. As compared with the undoped ZnO NPs buffer layer, a considerable improvement OPVs from 2.344% to 2.946% is obtained by using 5%-LZO NPs as a buffer layer, which owns Jsc of 7.22 mA/cm2, Voc of 0.86 V, and FF of 47.4%. X-ray absorption near-edge structure (XANES) spectra show the increase of unoccupied O 2p-derived states in 5%-LZO NPs, which leads to better carrier conductance. The energy levels of defects in 5%-LZO NPs analyzed by photoluminescence are found to facilitate electron extraction to the cathode. Impedance measurement results indicate that the carrier lifetime is effectively increased to 2176 μs by applying the 5%-LZO NPs buffer layer, showing the improvement of carrier extraction efficiency and resulting in its progressive performance.
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U2 - 10.1021/acs.jpcc.6b03656
DO - 10.1021/acs.jpcc.6b03656
M3 - Article
AN - SCOPUS:84979502153
SN - 1932-7447
VL - 120
SP - 15035
EP - 15041
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 28
ER -