Abstract
Lithium-doped ZnO films were deposited by radio frequency magnetron sputtering on Corning 1737 glass substrates. The Li content in the films varied from 0 to 10 at. %, as determined by wavelength-dispersive X-ray analysis and inductively coupled plasma mass spectrometry. The effect of Li content on the microstructure and electrical properties was studied. The XRD results indicated that all the samples have a ZnO wurtzite structure, and no secondary phase formed as the Li atoms were incorporated into ZnO thin films. The Hall and electrical resistance measurements revealed that the resistivity is decreased by Li doping. The EXAFS measurement showed that the bonding length of both Zn-O and Zn-Zn was decreased after converting to p-type conduction due to incorporation of lithium atoms. All the results confirmed that the Li ions were well incorporated into the ZnO lattices as a result of substituting Zn sites without changing the wurtzite structure, and no secondary phase appeared in the Li-doped ZnO thin film.
| Original language | English |
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| Pages (from-to) | 10252-10255 |
| Number of pages | 4 |
| Journal | Journal of Physical Chemistry C |
| Volume | 115 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 2011 May 26 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- General Energy
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films