Local neutron transmutation doping using isotopically enriched silicon film

Yoichi Yamada; Hiroyuki Yamamoto; Hironori Ohba; Masato Sasase; Fumitaka Esaka; Kenji Yamaguchi; Haruhiko Udono; Shin ichi Shamoto; Atsushi Yokoyama; Kiichi Hojou

doi:10.1016/j.jpcs.2007.08.056

Local neutron transmutation doping using isotopically enriched silicon film

Yoichi Yamada, Hiroyuki Yamamoto, Hironori Ohba, Masato Sasase, Fumitaka Esaka, Kenji Yamaguchi, Haruhiko Udono, Shin ichi Shamoto, Atsushi Yokoyama, Kiichi Hojou

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

By means of thermal neutron irradiation on nanostructure fabricated from ³⁰Si-enriched material, the nanoregion can be selectively and homogeneously doped with ³¹P owing to the nuclear transmutation of ³⁰Si→³¹P (local neutron transmutation doping, NTD). In order to demonstrate the capability of local NTD, ³⁰Si-enriched silicon film is fabricated on p-Si(1 0 0) and irradiated by thermal neutrons. Upon the irradiation, film is n-doped while the substrate remains p-type, resulting in a formation of a p-n junction at film-substrate interface showing a rectification. This suggests strong possibility for application of the NTD for nano-scaled semiconductor devices.

Original language	English
Pages (from-to)	2204-2208
Number of pages	5
Journal	Journal of Physics and Chemistry of Solids
Volume	68
Issue number	11
DOIs	https://doi.org/10.1016/j.jpcs.2007.08.056
Publication status	Published - 2007 Nov

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science
Condensed Matter Physics

Access to Document

10.1016/j.jpcs.2007.08.056

Cite this

@article{b7b557c89a854e5096b3ec83b7858123,

title = "Local neutron transmutation doping using isotopically enriched silicon film",

abstract = "By means of thermal neutron irradiation on nanostructure fabricated from 30Si-enriched material, the nanoregion can be selectively and homogeneously doped with 31P owing to the nuclear transmutation of 30Si→31P (local neutron transmutation doping, NTD). In order to demonstrate the capability of local NTD, 30Si-enriched silicon film is fabricated on p-Si(1 0 0) and irradiated by thermal neutrons. Upon the irradiation, film is n-doped while the substrate remains p-type, resulting in a formation of a p-n junction at film-substrate interface showing a rectification. This suggests strong possibility for application of the NTD for nano-scaled semiconductor devices.",

author = "Yoichi Yamada and Hiroyuki Yamamoto and Hironori Ohba and Masato Sasase and Fumitaka Esaka and Kenji Yamaguchi and Haruhiko Udono and Shamoto, {Shin ichi} and Atsushi Yokoyama and Kiichi Hojou",

note = "Funding Information: This work was partially supported by the Grant-in-Aid for Exploratory Research (#18651063), the Ministry of Education, Culture, Sports, Science and Technology (MEXT).",

year = "2007",

month = nov,

doi = "10.1016/j.jpcs.2007.08.056",

language = "English",

volume = "68",

pages = "2204--2208",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Limited",

number = "11",

}

TY - JOUR

T1 - Local neutron transmutation doping using isotopically enriched silicon film

AU - Yamada, Yoichi

AU - Yamamoto, Hiroyuki

AU - Ohba, Hironori

AU - Sasase, Masato

AU - Esaka, Fumitaka

AU - Yamaguchi, Kenji

AU - Udono, Haruhiko

AU - Shamoto, Shin ichi

AU - Yokoyama, Atsushi

AU - Hojou, Kiichi

N1 - Funding Information: This work was partially supported by the Grant-in-Aid for Exploratory Research (#18651063), the Ministry of Education, Culture, Sports, Science and Technology (MEXT).

PY - 2007/11

Y1 - 2007/11

N2 - By means of thermal neutron irradiation on nanostructure fabricated from 30Si-enriched material, the nanoregion can be selectively and homogeneously doped with 31P owing to the nuclear transmutation of 30Si→31P (local neutron transmutation doping, NTD). In order to demonstrate the capability of local NTD, 30Si-enriched silicon film is fabricated on p-Si(1 0 0) and irradiated by thermal neutrons. Upon the irradiation, film is n-doped while the substrate remains p-type, resulting in a formation of a p-n junction at film-substrate interface showing a rectification. This suggests strong possibility for application of the NTD for nano-scaled semiconductor devices.

AB - By means of thermal neutron irradiation on nanostructure fabricated from 30Si-enriched material, the nanoregion can be selectively and homogeneously doped with 31P owing to the nuclear transmutation of 30Si→31P (local neutron transmutation doping, NTD). In order to demonstrate the capability of local NTD, 30Si-enriched silicon film is fabricated on p-Si(1 0 0) and irradiated by thermal neutrons. Upon the irradiation, film is n-doped while the substrate remains p-type, resulting in a formation of a p-n junction at film-substrate interface showing a rectification. This suggests strong possibility for application of the NTD for nano-scaled semiconductor devices.

UR - http://www.scopus.com/inward/record.url?scp=35748963537&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35748963537&partnerID=8YFLogxK

U2 - 10.1016/j.jpcs.2007.08.056

DO - 10.1016/j.jpcs.2007.08.056

M3 - Article

AN - SCOPUS:35748963537

SN - 0022-3697

VL - 68

SP - 2204

EP - 2208

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 11

ER -

Local neutron transmutation doping using isotopically enriched silicon film

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this