Localized tail state distribution and hopping transport in ultrathin zinc-tin-oxide thin film transistor

Jeng Ting Li, Li Chih Liu, Jen Sue Chen, Jiann Shing Jeng, Po Yung Liao, Hsiao Cheng Chiang, Ting Chang Chang, Mohamad Insan Nugraha, Maria Antonietta Loi

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Carrier transport properties of solution processed ultra thin (4 nm) zinc-tin oxide (ZTO) thin film transistor are investigated based on its transfer characteristics measured at the temperature ranging from 310 K to 77 K. As temperature decreases, the transfer curves show a parellel shift toward more postive voltages. The conduction mechanism of ultra-thin ZTO film and its connection to the density of band tail states have been substantiated by two approaches, including fitting logarithm drain current (log ID) to T-1/3 at 310 K to 77 K according to the two-dimensional Mott variable range hopping theory and the extraction of density of localized tail states through the energy distribution of trapped carrier density. The linear dependency of log ID vs. T-1/3 indicates that the dominant carrier transport mechanism in ZTO is the variable range hopping. The extracted value of density of tail states at the conduction band minimum is 4.75 × 1020 cm-3 eV-1 through the energy distribution of trapped carrier density. The high density of localized tail states in the ultra thin ZTO film is the key factor leading to the room-temperature hopping transport of carriers among localized tail states.

Original languageEnglish
Article number023504
JournalApplied Physics Letters
Volume110
Issue number2
DOIs
Publication statusPublished - 2017 Jan 9

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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