Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered with Color Filters for Use in Optical Sensors

Fu Hsing Chen, Chia Lun Lee, Jui Hung Chang, Wei Sheng Liao, Chieh An Lin, Chia Wei Kuo, Chih Lung Lin

Research output: Contribution to journalArticlepeer-review

Abstract

This work investigates the long-term behavior of photo thin-film transistors (TFTs) that are covered with color filters and based on hydrogenated amorphous silicon (a-Si:H) technology. Based on the electrical characteristics and the optical responses of these TFTs as measured under different stress conditions, a new method for driving a photo TFT with a negative gate-source voltage is proposed to suppress the degradation of the photocurrent. The effectiveness of the newly proposed method is verified using our previously developed white-light photocurrent gating (WPCG) structure, the measurement of photocurrents, and the established models of red, green, and blue photo TFTs. An accelerated lifetime test of the fabricated circuit was carried out at 70 °C and under the illumination of ambient light for 504 hours, demonstrating that the proposed method improves the long-term reliability of optical sensors.

Original languageEnglish
Article number8807109
Pages (from-to)116172-116178
Number of pages7
JournalIEEE Access
Volume7
DOIs
Publication statusPublished - 2019

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Materials Science(all)
  • Engineering(all)

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