Abstract
The reliable n+-ZnSSe metal-semiconductor-metal (MSM) blue-green light emitting diodes (LEDs) have been fabricated. The contact metal was CuGe/Pt/Au. The current transport mechanisms agree very well with the back-to-back tunneling diodes. The kink phenomena were observed in the MSM current-voltage curves. In the metal-semiconductor interface, the element Zn in ZnSSe can be replaced by Cu results in some acceptor levels as radiative recombination centers in the MS interface. The peak wavelength in the LED electroluminescent (EL) spectra was strongly dependent on the injection currents from 5 to 40 mA. The peak wavelength and full width at half maximum are 510 and 10 nm, respectively, at 10 mA injection current. When the injection current increases to 15 mA, the peak wavelength shifted to 530 nm due to different recombination centers. Further increasing the injection currents, the peak wavelength shifted slightly to the long wavelength side.
| Original language | English |
|---|---|
| Pages (from-to) | 205-215 |
| Number of pages | 11 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3938 |
| Publication status | Published - 2000 Jan 1 |
| Event | Light-Emitting Diodes: Research, Manufacturing, and Applications IV - San Jose, CA, USA Duration: 2000 Jan 26 → 2000 Jan 27 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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Long-wavelength shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents. / Su, Y. K.; Chen, W. R.; Chang, Shoou-Jinn; Juang, F. S.; Lan, W. H.; Lin, A. C.H.; Chang, H.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3938, 01.01.2000, p. 205-215.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Long-wavelength shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents
AU - Su, Y. K.
AU - Chen, W. R.
AU - Chang, Shoou-Jinn
AU - Juang, F. S.
AU - Lan, W. H.
AU - Lin, A. C.H.
AU - Chang, H.
PY - 2000/1/1
Y1 - 2000/1/1
N2 - The reliable n+-ZnSSe metal-semiconductor-metal (MSM) blue-green light emitting diodes (LEDs) have been fabricated. The contact metal was CuGe/Pt/Au. The current transport mechanisms agree very well with the back-to-back tunneling diodes. The kink phenomena were observed in the MSM current-voltage curves. In the metal-semiconductor interface, the element Zn in ZnSSe can be replaced by Cu results in some acceptor levels as radiative recombination centers in the MS interface. The peak wavelength in the LED electroluminescent (EL) spectra was strongly dependent on the injection currents from 5 to 40 mA. The peak wavelength and full width at half maximum are 510 and 10 nm, respectively, at 10 mA injection current. When the injection current increases to 15 mA, the peak wavelength shifted to 530 nm due to different recombination centers. Further increasing the injection currents, the peak wavelength shifted slightly to the long wavelength side.
AB - The reliable n+-ZnSSe metal-semiconductor-metal (MSM) blue-green light emitting diodes (LEDs) have been fabricated. The contact metal was CuGe/Pt/Au. The current transport mechanisms agree very well with the back-to-back tunneling diodes. The kink phenomena were observed in the MSM current-voltage curves. In the metal-semiconductor interface, the element Zn in ZnSSe can be replaced by Cu results in some acceptor levels as radiative recombination centers in the MS interface. The peak wavelength in the LED electroluminescent (EL) spectra was strongly dependent on the injection currents from 5 to 40 mA. The peak wavelength and full width at half maximum are 510 and 10 nm, respectively, at 10 mA injection current. When the injection current increases to 15 mA, the peak wavelength shifted to 530 nm due to different recombination centers. Further increasing the injection currents, the peak wavelength shifted slightly to the long wavelength side.
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M3 - Conference article
AN - SCOPUS:0033728466
VL - 3938
SP - 205
EP - 215
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
ER -