Long-wavelength shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents

Y. K. Su, W. R. Chen, S. J. Chang, F. S. Juang, W. H. Lan, A. C.H. Lin, H. Chang

Research output: Contribution to journalConference articlepeer-review

Abstract

The reliable n+-ZnSSe metal-semiconductor-metal (MSM) blue-green light emitting diodes (LEDs) have been fabricated. The contact metal was CuGe/Pt/Au. The current transport mechanisms agree very well with the back-to-back tunneling diodes. The kink phenomena were observed in the MSM current-voltage curves. In the metal-semiconductor interface, the element Zn in ZnSSe can be replaced by Cu results in some acceptor levels as radiative recombination centers in the MS interface. The peak wavelength in the LED electroluminescent (EL) spectra was strongly dependent on the injection currents from 5 to 40 mA. The peak wavelength and full width at half maximum are 510 and 10 nm, respectively, at 10 mA injection current. When the injection current increases to 15 mA, the peak wavelength shifted to 530 nm due to different recombination centers. Further increasing the injection currents, the peak wavelength shifted slightly to the long wavelength side.

Original languageEnglish
Pages (from-to)205-215
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3938
Publication statusPublished - 2000
EventLight-Emitting Diodes: Research, Manufacturing, and Applications IV - San Jose, CA, USA
Duration: 2000 Jan 262000 Jan 27

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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