Low dark current GaN p-i-n photodetectors with a low-temperature AlN interlayer

J. C. Lin; Y. K. Su; S. J. Chang; W. H. Lan; W. R. Chen; K. C. Huang; Y. C. Cheng; W. J. Lin

doi:10.1109/LPT.2008.926021

Low dark current GaN p-i-n photodetectors with a low-temperature AlN interlayer

J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, W. R. Chen, K. C. Huang, Y. C. Cheng, W. J. Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

GaN p-i-n ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN interlayer were proposed and fabricated. It was found that the dark current of such detectors is as small as 28pA even at a high reverse bias of 40 V. Although the high potential barrier at the AlN-GaN interface would slightly reduce the responsivity of PD under low reverse biases, the high UV-to-visible rejection ratio of the PD with an LT-AlN interlayer could be achieved under high reverse biases due to its very lowdark current. The rejection ratio of the PD with the LT-AlN interlayer is as large as 735 at the reverse bias of 40 V.

Original language	English
Pages (from-to)	1255-1257
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	20
Issue number	14
DOIs	https://doi.org/10.1109/LPT.2008.926021
Publication status	Published - 2008 Jul 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2008.926021

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title = "Low dark current GaN p-i-n photodetectors with a low-temperature AlN interlayer",

abstract = "GaN p-i-n ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN interlayer were proposed and fabricated. It was found that the dark current of such detectors is as small as 28pA even at a high reverse bias of 40 V. Although the high potential barrier at the AlN-GaN interface would slightly reduce the responsivity of PD under low reverse biases, the high UV-to-visible rejection ratio of the PD with an LT-AlN interlayer could be achieved under high reverse biases due to its very lowdark current. The rejection ratio of the PD with the LT-AlN interlayer is as large as 735 at the reverse bias of 40 V.",

author = "Lin, {J. C.} and Su, {Y. K.} and Chang, {S. J.} and Lan, {W. H.} and Chen, {W. R.} and Huang, {K. C.} and Cheng, {Y. C.} and Lin, {W. J.}",

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doi = "10.1109/LPT.2008.926021",

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journal = "IEEE Photonics Technology Letters",

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T1 - Low dark current GaN p-i-n photodetectors with a low-temperature AlN interlayer

AU - Lin, J. C.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Lan, W. H.

AU - Chen, W. R.

AU - Huang, K. C.

AU - Cheng, Y. C.

AU - Lin, W. J.

PY - 2008/7/15

Y1 - 2008/7/15

N2 - GaN p-i-n ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN interlayer were proposed and fabricated. It was found that the dark current of such detectors is as small as 28pA even at a high reverse bias of 40 V. Although the high potential barrier at the AlN-GaN interface would slightly reduce the responsivity of PD under low reverse biases, the high UV-to-visible rejection ratio of the PD with an LT-AlN interlayer could be achieved under high reverse biases due to its very lowdark current. The rejection ratio of the PD with the LT-AlN interlayer is as large as 735 at the reverse bias of 40 V.

AB - GaN p-i-n ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN interlayer were proposed and fabricated. It was found that the dark current of such detectors is as small as 28pA even at a high reverse bias of 40 V. Although the high potential barrier at the AlN-GaN interface would slightly reduce the responsivity of PD under low reverse biases, the high UV-to-visible rejection ratio of the PD with an LT-AlN interlayer could be achieved under high reverse biases due to its very lowdark current. The rejection ratio of the PD with the LT-AlN interlayer is as large as 735 at the reverse bias of 40 V.

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Low dark current GaN p-i-n photodetectors with a low-temperature AlN interlayer

Abstract

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