Low dark current InGaAs(P)/InP p-i-n photodiodes

Yen Wei Chen, Wei Chou Hsu, Yeong Jia Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


Planar InGaAs(P)/InP p-i-n photodiodes have been successfully fabricated by an LP-MOCVD. High-quality and uniform epitaxial layers are obtained. The InGaAs layer background concentration is as low as 4.5×1013 cm-3. The dark current is significantly reduced by using a wider-band-gap material of quaternary InxGa1-xAsyP1-y as a cap layer to reduce the device surface leakage current. The p-i-n photodiode with a wide-band-gap InP cap layer exhibits a dark current as low as 60 pA at -10 V bias, corresponding to a dark current density of 4.2×10-7 A/cm2.

Original languageEnglish
Title of host publicationProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
EditorsK. T. Chan, H. S. Kwok
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780378873, 9780780378872
Publication statusPublished - 2003 Jan 1
Event6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China
Duration: 2003 Sep 122003 Sep 14

Publication series

NameProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003


Other6th Chinese Optoelectronics Symposium, COES 2003
CityHong Kong

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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