Low dark current InGaAs(P)/InP p-i-n photodiodes

Yen Wei Chen, Wei Chou Hsu, Yeong Jia Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Planar InGaAs(P)/InP p-i-n photodiodes have been successfully fabricated by an LP-MOCVD. High-quality and uniform epitaxial layers are obtained. The InGaAs layer background concentration is as low as 4.5×1013 cm-3. The dark current is significantly reduced by using a wider-band-gap material of quaternary InxGa1-xAsyP1-y as a cap layer to reduce the device surface leakage current. The p-i-n photodiode with a wide-band-gap InP cap layer exhibits a dark current as low as 60 pA at -10 V bias, corresponding to a dark current density of 4.2×10-7 A/cm2.

Original languageEnglish
Title of host publicationProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
EditorsK. T. Chan, H. S. Kwok
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages95-98
Number of pages4
ISBN (Electronic)0780378873, 9780780378872
DOIs
Publication statusPublished - 2003 Jan 1
Event6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China
Duration: 2003 Sep 122003 Sep 14

Publication series

NameProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

Other

Other6th Chinese Optoelectronics Symposium, COES 2003
CountryChina
CityHong Kong
Period03-09-1203-09-14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Chen, Y. W., Hsu, W. C., & Chen, Y. J. (2003). Low dark current InGaAs(P)/InP p-i-n photodiodes. In K. T. Chan, & H. S. Kwok (Eds.), Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003 (pp. 95-98). [1278173] (Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COS.2003.1278173