A low source/drain electrode contact resistanceunder low gate voltage is demonstrated by inserting an F4-TCNQ thin layer between pentacene and Au in pentacene-based thin-film transistors. A contact resistance was improved by approximately 32% compared with the transistors without F4-TCNQ. This improvement was verified via atomic force microscopy, which indicated that the smooth surface of the pentacene layer with F4-TCNQ modification layercan effectively reduce the contact resistance. Thus, higher on current and therefore improved mobility of 11.27 cm2 V-1 s -1 was achieved in the pentacene-based thin-film transistors with a solution-processed barium titanate gate dielectric.
|Journal||ECS Solid State Letters|
|Publication status||Published - 2014 Jan 1|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering