Low electrode contact resistance in pentacene-based thin-film transistors by inserting F₄-TCNQ between pentacene and Au

A low source/drain electrode contact resistanceunder low gate voltage is demonstrated by inserting an F₄-TCNQ thin layer between pentacene and Au in pentacene-based thin-film transistors. A contact resistance was improved by approximately 32% compared with the transistors without F₄-TCNQ. This improvement was verified via atomic force microscopy, which indicated that the smooth surface of the pentacene layer with F₄-TCNQ modification layercan effectively reduce the contact resistance. Thus, higher on current and therefore improved mobility of 11.27 cm² V^-1 s ^-1 was achieved in the pentacene-based thin-film transistors with a solution-processed barium titanate gate dielectric.