Low electrode contact resistance in pentacene-based thin-film transistors by inserting F4-TCNQ between pentacene and Au

Shun Kuan Lin, Chia Yu Wei, Dei Wei Chou, Yeong-Her Wang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A low source/drain electrode contact resistanceunder low gate voltage is demonstrated by inserting an F4-TCNQ thin layer between pentacene and Au in pentacene-based thin-film transistors. A contact resistance was improved by approximately 32% compared with the transistors without F4-TCNQ. This improvement was verified via atomic force microscopy, which indicated that the smooth surface of the pentacene layer with F4-TCNQ modification layercan effectively reduce the contact resistance. Thus, higher on current and therefore improved mobility of 11.27 cm2 V-1 s -1 was achieved in the pentacene-based thin-film transistors with a solution-processed barium titanate gate dielectric.

Original languageEnglish
JournalECS Solid State Letters
Volume3
Issue number7
DOIs
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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