Low-fire BiTaO4 dielectric ceramics for microwave applications

Cheng Liang Huang; Min Hang Weng

doi:10.1016/S0167-577X(99)00226-8

Low-fire BiTaO₄ dielectric ceramics for microwave applications

Cheng Liang Huang, Min Hang Weng

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

The dielectric properties at microwave frequencies and the microstructures of BiTaO₄ ceramics with 0.5 wt.% doping of CuO have been investigated. The BiTaO₄ ceramics can be sintered to approach 95% theoretical density at 960°C. Sintered ceramic samples were characterized by X-ray and scanning electron microscopy (SEM). The dielectric constant values (ε_r) saturate at 44-45. The Q × f values of 8000-12 000 (at 6 GHz) can be obtained when the sintering temperatures are in the range of 920-960°C. The temperature coefficient of resonant frequency τ_f was -40 ppm/°C. The BiTaO₄ ceramics have applications for multilayer microwave devices requiring low sintering temperatures.

Original language	English
Pages (from-to)	32-35
Number of pages	4
Journal	Materials Letters
Volume	43
Issue number	1
DOIs	https://doi.org/10.1016/S0167-577X(99)00226-8
Publication status	Published - 2000 Mar

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0167-577X(99)00226-8

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title = "Low-fire BiTaO4 dielectric ceramics for microwave applications",

abstract = "The dielectric properties at microwave frequencies and the microstructures of BiTaO4 ceramics with 0.5 wt.% doping of CuO have been investigated. The BiTaO4 ceramics can be sintered to approach 95% theoretical density at 960°C. Sintered ceramic samples were characterized by X-ray and scanning electron microscopy (SEM). The dielectric constant values (εr) saturate at 44-45. The Q × f values of 8000-12 000 (at 6 GHz) can be obtained when the sintering temperatures are in the range of 920-960°C. The temperature coefficient of resonant frequency τf was -40 ppm/°C. The BiTaO4 ceramics have applications for multilayer microwave devices requiring low sintering temperatures.",

author = "Huang, {Cheng Liang} and Weng, {Min Hang}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China under grant NSC-88-2213-E-006-102.",

year = "2000",

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doi = "10.1016/S0167-577X(99)00226-8",

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T1 - Low-fire BiTaO4 dielectric ceramics for microwave applications

AU - Huang, Cheng Liang

AU - Weng, Min Hang

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China under grant NSC-88-2213-E-006-102.

PY - 2000/3

Y1 - 2000/3

N2 - The dielectric properties at microwave frequencies and the microstructures of BiTaO4 ceramics with 0.5 wt.% doping of CuO have been investigated. The BiTaO4 ceramics can be sintered to approach 95% theoretical density at 960°C. Sintered ceramic samples were characterized by X-ray and scanning electron microscopy (SEM). The dielectric constant values (εr) saturate at 44-45. The Q × f values of 8000-12 000 (at 6 GHz) can be obtained when the sintering temperatures are in the range of 920-960°C. The temperature coefficient of resonant frequency τf was -40 ppm/°C. The BiTaO4 ceramics have applications for multilayer microwave devices requiring low sintering temperatures.

AB - The dielectric properties at microwave frequencies and the microstructures of BiTaO4 ceramics with 0.5 wt.% doping of CuO have been investigated. The BiTaO4 ceramics can be sintered to approach 95% theoretical density at 960°C. Sintered ceramic samples were characterized by X-ray and scanning electron microscopy (SEM). The dielectric constant values (εr) saturate at 44-45. The Q × f values of 8000-12 000 (at 6 GHz) can be obtained when the sintering temperatures are in the range of 920-960°C. The temperature coefficient of resonant frequency τf was -40 ppm/°C. The BiTaO4 ceramics have applications for multilayer microwave devices requiring low sintering temperatures.

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JO - Materials Letters

JF - Materials Letters

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Low-fire BiTaO₄ dielectric ceramics for microwave applications

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