Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications

A. Balandin; S. V. Morozov; S. Cai; R. Li; K. L. Wang; G. Wijeratne; C. R. Viswanathan

doi:10.1109/22.780388

Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications

A. Balandin, S. V. Morozov, S. Cai, R. Li, K. L. Wang, G. Wijeratne, C. R. Viswanathan

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

91 Citations (Scopus)

Abstract

We report a detailed investigation of flicker noise in novel GaN/AlGaN heterostructure field-effect transistors (GaN HFET). Low values of 1/f noise found in these devices (i.e., the Hooge parameter is on the order of 10^-4) open up the possibility for applications in communication systems. We have examined the scaling of the noise spectral density with the device dimensions in order to optimize their performance. It was also found that the slop γ of the 1/f^γ noise density spectrum is in the 1.0-1.3 range for all devices and decreases with the decreasing (i.e., more negative) gate bias. The results are important for low-noise electronic technologies requiring a low phase-noise level.

Original language	English
Pages (from-to)	1413-1417
Number of pages	5
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	47
Issue number	8
DOIs	https://doi.org/10.1109/22.780388
Publication status	Published - 1999

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/22.780388

Cite this

@article{62458dc1f5f34a5b8656a86ae69d342d,

title = "Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications",

abstract = "We report a detailed investigation of flicker noise in novel GaN/AlGaN heterostructure field-effect transistors (GaN HFET). Low values of 1/f noise found in these devices (i.e., the Hooge parameter is on the order of 10-4) open up the possibility for applications in communication systems. We have examined the scaling of the noise spectral density with the device dimensions in order to optimize their performance. It was also found that the slop γ of the 1/fγ noise density spectrum is in the 1.0-1.3 range for all devices and decreases with the decreasing (i.e., more negative) gate bias. The results are important for low-noise electronic technologies requiring a low phase-noise level.",

author = "A. Balandin and Morozov, {S. V.} and S. Cai and R. Li and Wang, {K. L.} and G. Wijeratne and Viswanathan, {C. R.}",

note = "Funding Information: Manuscript received November 25, 1998; revised November 25, 1998. This work was supported in part by the Department of Defense under the Multidisciplinary University Research Initiative Army Research “Low-Power/Low-Noise Electronic Technology for Mobile Communications” Program.",

year = "1999",

doi = "10.1109/22.780388",

language = "English",

volume = "47",

pages = "1413--1417",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications

AU - Balandin, A.

AU - Morozov, S. V.

AU - Cai, S.

AU - Li, R.

AU - Wang, K. L.

AU - Wijeratne, G.

AU - Viswanathan, C. R.

N1 - Funding Information: Manuscript received November 25, 1998; revised November 25, 1998. This work was supported in part by the Department of Defense under the Multidisciplinary University Research Initiative Army Research “Low-Power/Low-Noise Electronic Technology for Mobile Communications” Program.

PY - 1999

Y1 - 1999

N2 - We report a detailed investigation of flicker noise in novel GaN/AlGaN heterostructure field-effect transistors (GaN HFET). Low values of 1/f noise found in these devices (i.e., the Hooge parameter is on the order of 10-4) open up the possibility for applications in communication systems. We have examined the scaling of the noise spectral density with the device dimensions in order to optimize their performance. It was also found that the slop γ of the 1/fγ noise density spectrum is in the 1.0-1.3 range for all devices and decreases with the decreasing (i.e., more negative) gate bias. The results are important for low-noise electronic technologies requiring a low phase-noise level.

AB - We report a detailed investigation of flicker noise in novel GaN/AlGaN heterostructure field-effect transistors (GaN HFET). Low values of 1/f noise found in these devices (i.e., the Hooge parameter is on the order of 10-4) open up the possibility for applications in communication systems. We have examined the scaling of the noise spectral density with the device dimensions in order to optimize their performance. It was also found that the slop γ of the 1/fγ noise density spectrum is in the 1.0-1.3 range for all devices and decreases with the decreasing (i.e., more negative) gate bias. The results are important for low-noise electronic technologies requiring a low phase-noise level.

UR - http://www.scopus.com/inward/record.url?scp=0032665814&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032665814&partnerID=8YFLogxK

U2 - 10.1109/22.780388

DO - 10.1109/22.780388

M3 - Article

AN - SCOPUS:0032665814

SN - 0018-9480

VL - 47

SP - 1413

EP - 1417

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 8

ER -

Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this