Low frequency noise and screening effects in AlGaN/GaN HEMTs

J. A. Garrido, F. Calle, E. Muñoz, I. Izpura, J. L. Sánchez-Rojas, R. Li, K. L. Wang

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


Low frequency noise has been studied in Al0.15Ga0.85N/GaN high electron mobility transistors grown on sapphire substrates by metal organic vapour phase epitaxy. A strong dependence between the Hooge parameter αH and VGS was found. A Hooge parameter as low as 5 × 10-4 was obtained at VGS = 0V. Mobility fluctuations produced by changes in the rate of trapping charge at dislocations are suggested to be the dominant 1/f noise mechanism, although screening effects by the channel electrons significantly reduce their effect on the 1/f noise properties.

Original languageEnglish
Pages (from-to)2357-2359
Number of pages3
JournalElectronics Letters
Issue number24
Publication statusPublished - 1998 Nov 26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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