Low-frequency noise characteristics for various ZrO2-added HfO2-based 28-nm High-k/metal-gate nMOSFETs

Shih Chang Tsai; San Lein Wu; Bo Chin Wang; Shoou Jinn Chang; Che Hua Hsu; Chih Wei Yang; Chien Ming Lai; Chia Wei Hsu; Osbert Cheng; Po Chin Huang; Jone F. Chen

doi:10.1109/LED.2013.2261858

Low-frequency noise characteristics for various ZrO₂-added HfO₂-based 28-nm High-k/metal-gate nMOSFETs

Shih Chang Tsai, San Lein Wu, Bo Chin Wang, Shoou Jinn Chang, Che Hua Hsu, Chih Wei Yang, Chien Ming Lai, Chia Wei Hsu, Osbert Cheng, Po Chin Huang, Jone F. Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

In this letter, the effect of adding ZrO₂ to different positions in an HfO₂-based high-k (HK) gate-stack is investigated by a low-frequency (1/ f ) noise measurement. The tested nMOSFETs are fabricated using 28-nm gate-last HK/metalgate technology with a ∼1-nm SiO₂ interfacial layer. The 1/ f noise mechanism of these devices is described by the carrier number fluctuation, and the extracted trap densities (Nt) are 8.9 × 10¹⁸- 5.1 × 10¹⁹ eV^-1 cm ^-3. However, reference devices with a pure ZrO₂ gate dielectric exhibit 1/ f noise characteristics that are consistent with the unified model, which incorporates both the carrier number and the correlated mobility fluctuations. The reference devices are with lower N_t values in the range of 5.8 × 1017 - 2.4 × 10¹⁸ eV^-1 cm^-3. In addition, there is an increase in N_t as the initial HfO₂ layer becomes thicker. These results show that the trapping behavior is mainly dominated by the HfO₂ film and is dependent on the thickness of the initial HfO₂ layer in the ZrO ₂/HfO₂/SiO₂ gate-stack.

Original language	English
Article number	6525388
Pages (from-to)	834-836
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	7
DOIs	https://doi.org/10.1109/LED.2013.2261858
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2261858

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@article{509b20e28aff41929ce5aeb7bfc6544a,

title = "Low-frequency noise characteristics for various ZrO2-added HfO2-based 28-nm High-k/metal-gate nMOSFETs",

abstract = "In this letter, the effect of adding ZrO2 to different positions in an HfO2-based high-k (HK) gate-stack is investigated by a low-frequency (1/ f ) noise measurement. The tested nMOSFETs are fabricated using 28-nm gate-last HK/metalgate technology with a ∼1-nm SiO2 interfacial layer. The 1/ f noise mechanism of these devices is described by the carrier number fluctuation, and the extracted trap densities (Nt) are 8.9 × 1018- 5.1 × 1019 eV-1 cm -3. However, reference devices with a pure ZrO2 gate dielectric exhibit 1/ f noise characteristics that are consistent with the unified model, which incorporates both the carrier number and the correlated mobility fluctuations. The reference devices are with lower Nt values in the range of 5.8 × 1017 - 2.4 × 1018 eV-1 cm-3. In addition, there is an increase in Nt as the initial HfO2 layer becomes thicker. These results show that the trapping behavior is mainly dominated by the HfO2 film and is dependent on the thickness of the initial HfO2 layer in the ZrO 2/HfO2/SiO2 gate-stack.",

author = "Tsai, {Shih Chang} and Wu, {San Lein} and Wang, {Bo Chin} and Chang, {Shoou Jinn} and Hsu, {Che Hua} and Yang, {Chih Wei} and Lai, {Chien Ming} and Hsu, {Chia Wei} and Osbert Cheng and Huang, {Po Chin} and Chen, {Jone F.}",

year = "2013",

doi = "10.1109/LED.2013.2261858",

language = "English",

volume = "34",

pages = "834--836",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Low-frequency noise characteristics for various ZrO2-added HfO2-based 28-nm High-k/metal-gate nMOSFETs

AU - Tsai, Shih Chang

AU - Wu, San Lein

AU - Wang, Bo Chin

AU - Chang, Shoou Jinn

AU - Hsu, Che Hua

AU - Yang, Chih Wei

AU - Lai, Chien Ming

AU - Hsu, Chia Wei

AU - Cheng, Osbert

AU - Huang, Po Chin

AU - Chen, Jone F.

PY - 2013

Y1 - 2013

N2 - In this letter, the effect of adding ZrO2 to different positions in an HfO2-based high-k (HK) gate-stack is investigated by a low-frequency (1/ f ) noise measurement. The tested nMOSFETs are fabricated using 28-nm gate-last HK/metalgate technology with a ∼1-nm SiO2 interfacial layer. The 1/ f noise mechanism of these devices is described by the carrier number fluctuation, and the extracted trap densities (Nt) are 8.9 × 1018- 5.1 × 1019 eV-1 cm -3. However, reference devices with a pure ZrO2 gate dielectric exhibit 1/ f noise characteristics that are consistent with the unified model, which incorporates both the carrier number and the correlated mobility fluctuations. The reference devices are with lower Nt values in the range of 5.8 × 1017 - 2.4 × 1018 eV-1 cm-3. In addition, there is an increase in Nt as the initial HfO2 layer becomes thicker. These results show that the trapping behavior is mainly dominated by the HfO2 film and is dependent on the thickness of the initial HfO2 layer in the ZrO 2/HfO2/SiO2 gate-stack.

AB - In this letter, the effect of adding ZrO2 to different positions in an HfO2-based high-k (HK) gate-stack is investigated by a low-frequency (1/ f ) noise measurement. The tested nMOSFETs are fabricated using 28-nm gate-last HK/metalgate technology with a ∼1-nm SiO2 interfacial layer. The 1/ f noise mechanism of these devices is described by the carrier number fluctuation, and the extracted trap densities (Nt) are 8.9 × 1018- 5.1 × 1019 eV-1 cm -3. However, reference devices with a pure ZrO2 gate dielectric exhibit 1/ f noise characteristics that are consistent with the unified model, which incorporates both the carrier number and the correlated mobility fluctuations. The reference devices are with lower Nt values in the range of 5.8 × 1017 - 2.4 × 1018 eV-1 cm-3. In addition, there is an increase in Nt as the initial HfO2 layer becomes thicker. These results show that the trapping behavior is mainly dominated by the HfO2 film and is dependent on the thickness of the initial HfO2 layer in the ZrO 2/HfO2/SiO2 gate-stack.

UR - http://www.scopus.com/inward/record.url?scp=84880077295&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880077295&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2261858

DO - 10.1109/LED.2013.2261858

M3 - Article

AN - SCOPUS:84880077295

SN - 0741-3106

VL - 34

SP - 834

EP - 836

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 6525388

ER -

Low-frequency noise characteristics for various ZrO₂-added HfO₂-based 28-nm High-k/metal-gate nMOSFETs

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