Abstract
We report the fabrication of epitaxial ZnO photoconductive sensors on sapphire substrates. With an incident light wavelength of 370 nm and a 5 V applied bias, we achieved a sensor responsivity of 20.5 mAW. It was also found that low-frequency and high-frequency noises in the fabricated sensors were dominated by 1/f type and shot noises, respectively. With a 5 V applied bias, it was found that noise equivalent power and normalized detectivity of the fabricated sensors were 1.83× 10-6 W and 6.91× 105 cm Hz0.5 W-1, respectively.
Original language | English |
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Pages (from-to) | J209-J211 |
Journal | Journal of the Electrochemical Society |
Volume | 154 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2007 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry