Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

Sheng Po Chang, Shoou Jinn Chang, Chien Yuan Lu, Yu Zung Chiou, Ricky W. Chuang, Hung Chieh Lin

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Nitride-based metal-semiconductor-metal ultraviolet (UV) photodetectors prepared on Si (1 1 1) substrate with stacked buffer layers were proposed and prepared. With 5 V applied bias, it was found that dark current of the fabricated device was only 7.95×10-12 A. With an applied bias of 10 V, it was found that peak responsivity was 0.06 A/W, corresponding to quantum efficiency of 21.2% while UV/visible rejection ratio was 244. With 5 V applied bias, it was found that noise equivalent power, NEP and detectivity, D*, of our detector were 1.70×10-13 W and 1.18×1013 cm Hz0.5 W-1, respectively.

Original languageEnglish
Pages (from-to)3003-3006
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number10
DOIs
Publication statusPublished - 2009 May 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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