Low-frequency noise characteristics of GaN Schottky barrier photodetectors prepared with nickel annealing

Tse Pu Chen; Sheng Joue Young; Shoou Jinn Chang; Bohr Ran Huang; Shih Ming Wang; Chih Hung Hsiao; San Lein Wu; Chun Bo Yang

doi:10.1109/JSEN.2012.2200886

Low-frequency noise characteristics of GaN Schottky barrier photodetectors prepared with nickel annealing

Tse Pu Chen, Sheng Joue Young, Shoou Jinn Chang, Bohr Ran Huang, Shih Ming Wang, Chih Hung Hsiao, San Lein Wu, Chun Bo Yang

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In this paper, GaN Schottky barrier photodetectors (PDs) prepared with and without Ni treatment were fabricated. I-V and noise characteristics of these devices were then investigated. Comparing the GaN PDs with and without Ni treatment, it was found that GaN PDs prepared with Ni treatment can not only reduce dark current, but also enhance the UV-to-Vis rejection ratio. With an applied bias of -2 V, it was found that noise equivalent power (NEP) and detectivity (D ^*) for the PDs prepared without Ni treatment were 9.95 × 10 ^-8W and 1.59 × 10 ⁷cmHz ^0.5W ^-1, respectively. At the same applied bias, it was also found that NEP and D ^* for PDs prepared with Ni treatment were 1.74 × 10 ^-11W and 9.07 × 10 ¹⁰cmHz ^0.5W ^-1, respectively.

Original language	English
Article number	6204027
Pages (from-to)	2824-2829
Number of pages	6
Journal	IEEE Sensors Journal
Volume	12
Issue number	9
DOIs	https://doi.org/10.1109/JSEN.2012.2200886
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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10.1109/JSEN.2012.2200886

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@article{083f561c4442456e8eeddc9ab05393b2,

title = "Low-frequency noise characteristics of GaN Schottky barrier photodetectors prepared with nickel annealing",

abstract = "In this paper, GaN Schottky barrier photodetectors (PDs) prepared with and without Ni treatment were fabricated. I-V and noise characteristics of these devices were then investigated. Comparing the GaN PDs with and without Ni treatment, it was found that GaN PDs prepared with Ni treatment can not only reduce dark current, but also enhance the UV-to-Vis rejection ratio. With an applied bias of -2 V, it was found that noise equivalent power (NEP) and detectivity (D *) for the PDs prepared without Ni treatment were 9.95 × 10 -8W and 1.59 × 10 7cmHz 0.5W -1, respectively. At the same applied bias, it was also found that NEP and D * for PDs prepared with Ni treatment were 1.74 × 10 -11W and 9.07 × 10 10cmHz 0.5W -1, respectively.",

author = "Chen, {Tse Pu} and Young, {Sheng Joue} and Chang, {Shoou Jinn} and Huang, {Bohr Ran} and Wang, {Shih Ming} and Hsiao, {Chih Hung} and Wu, {San Lein} and Yang, {Chun Bo}",

note = "Funding Information: Manuscript received September 9, 2011; revised April 25, 2012; accepted May 7, 2012. Date of publication May 23, 2012; date of current version August 1, 2012. This work was supported in part by the National Science Council (NSC) of Taiwan under Contract NSC 100-2221-E-150-057, the National Formosa University Research and Services Headquarters, the Center for Frontier Materials and Micro/Nano Science and Technology, the National Cheng Kung University (NCKU), Taiwan D97-2700, and the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education. The associate editor coordinating the review of this paper and approving it for publication was Dr. Alexander Fish.",

year = "2012",

doi = "10.1109/JSEN.2012.2200886",

language = "English",

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journal = "IEEE Sensors Journal",

issn = "1530-437X",

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T1 - Low-frequency noise characteristics of GaN Schottky barrier photodetectors prepared with nickel annealing

AU - Chen, Tse Pu

AU - Young, Sheng Joue

AU - Chang, Shoou Jinn

AU - Huang, Bohr Ran

AU - Wang, Shih Ming

AU - Hsiao, Chih Hung

AU - Wu, San Lein

AU - Yang, Chun Bo

N1 - Funding Information: Manuscript received September 9, 2011; revised April 25, 2012; accepted May 7, 2012. Date of publication May 23, 2012; date of current version August 1, 2012. This work was supported in part by the National Science Council (NSC) of Taiwan under Contract NSC 100-2221-E-150-057, the National Formosa University Research and Services Headquarters, the Center for Frontier Materials and Micro/Nano Science and Technology, the National Cheng Kung University (NCKU), Taiwan D97-2700, and the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education. The associate editor coordinating the review of this paper and approving it for publication was Dr. Alexander Fish.

PY - 2012

Y1 - 2012

N2 - In this paper, GaN Schottky barrier photodetectors (PDs) prepared with and without Ni treatment were fabricated. I-V and noise characteristics of these devices were then investigated. Comparing the GaN PDs with and without Ni treatment, it was found that GaN PDs prepared with Ni treatment can not only reduce dark current, but also enhance the UV-to-Vis rejection ratio. With an applied bias of -2 V, it was found that noise equivalent power (NEP) and detectivity (D *) for the PDs prepared without Ni treatment were 9.95 × 10 -8W and 1.59 × 10 7cmHz 0.5W -1, respectively. At the same applied bias, it was also found that NEP and D * for PDs prepared with Ni treatment were 1.74 × 10 -11W and 9.07 × 10 10cmHz 0.5W -1, respectively.

AB - In this paper, GaN Schottky barrier photodetectors (PDs) prepared with and without Ni treatment were fabricated. I-V and noise characteristics of these devices were then investigated. Comparing the GaN PDs with and without Ni treatment, it was found that GaN PDs prepared with Ni treatment can not only reduce dark current, but also enhance the UV-to-Vis rejection ratio. With an applied bias of -2 V, it was found that noise equivalent power (NEP) and detectivity (D *) for the PDs prepared without Ni treatment were 9.95 × 10 -8W and 1.59 × 10 7cmHz 0.5W -1, respectively. At the same applied bias, it was also found that NEP and D * for PDs prepared with Ni treatment were 1.74 × 10 -11W and 9.07 × 10 10cmHz 0.5W -1, respectively.

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Low-frequency noise characteristics of GaN Schottky barrier photodetectors prepared with nickel annealing

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