Low-frequency noise characteristics of GaN Schottky barrier photodetectors prepared with nickel annealing

Tse Pu Chen, Sheng Joue Young, Shoou Jinn Chang, Bohr Ran Huang, Shih Ming Wang, Chih Hung Hsiao, San Lein Wu, Chun Bo Yang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

In this paper, GaN Schottky barrier photodetectors (PDs) prepared with and without Ni treatment were fabricated. I-V and noise characteristics of these devices were then investigated. Comparing the GaN PDs with and without Ni treatment, it was found that GaN PDs prepared with Ni treatment can not only reduce dark current, but also enhance the UV-to-Vis rejection ratio. With an applied bias of -2 V, it was found that noise equivalent power (NEP) and detectivity (D *) for the PDs prepared without Ni treatment were 9.95 × 10 -8W and 1.59 × 10 7cmHz 0.5W -1, respectively. At the same applied bias, it was also found that NEP and D * for PDs prepared with Ni treatment were 1.74 × 10 -11W and 9.07 × 10 10cmHz 0.5W -1, respectively.

Original languageEnglish
Article number6204027
Pages (from-to)2824-2829
Number of pages6
JournalIEEE Sensors Journal
Volume12
Issue number9
DOIs
Publication statusPublished - 2012 Aug 13

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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