Low-frequency noise characteristics of in-doped ZnO ultraviolet photodetectors

Shoou Jinn Chang, Bi Gui Duan, Chih Hung Hsiao, Sheng Joue Young, Bo Chin Wang, Tsung Hsien Kao, Kai Shiang Tsai, San Lein Wu

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

We report the growth of vertically aligned indium-doped ZnO (IZO) nanorods on a glass substrate using a low-temperature hydrothermal method. An IZO nanorod metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) was also fabricated. It was found that the UV-to-visible rejection ratio of the fabricated PD was ~109 when biased at 1 V with a sharp cutoff at 390 nm. With an incident light wavelength of 390 nm and an applied bias of 1 V, it was found that measured responsivity of the PD was 2.5 A/W. Furthermore, it was also found that the noise equivalent power and detectivity of the fabricated IZO nanorod MSM PD were 1.42 × 10-10 W and 1.44 × 1011 cm·Hz0.5·W-1, respectively.

Original languageEnglish
Article number6589111
Pages (from-to)2043-2046
Number of pages4
JournalIEEE Photonics Technology Letters
Volume25
Issue number21
DOIs
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Low-frequency noise characteristics of in-doped ZnO ultraviolet photodetectors'. Together they form a unique fingerprint.

Cite this