Low-frequency noise characteristics of in-doped ZnO ultraviolet photodetectors

Shoou Jinn Chang; Bi Gui Duan; Chih Hung Hsiao; Sheng Joue Young; Bo Chin Wang; Tsung Hsien Kao; Kai Shiang Tsai; San Lein Wu

doi:10.1109/LPT.2013.2280719

Low-frequency noise characteristics of in-doped ZnO ultraviolet photodetectors

Shoou Jinn Chang, Bi Gui Duan, Chih Hung Hsiao, Sheng Joue Young, Bo Chin Wang, Tsung Hsien Kao, Kai Shiang Tsai, San Lein Wu

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We report the growth of vertically aligned indium-doped ZnO (IZO) nanorods on a glass substrate using a low-temperature hydrothermal method. An IZO nanorod metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) was also fabricated. It was found that the UV-to-visible rejection ratio of the fabricated PD was ~109 when biased at 1 V with a sharp cutoff at 390 nm. With an incident light wavelength of 390 nm and an applied bias of 1 V, it was found that measured responsivity of the PD was 2.5 A/W. Furthermore, it was also found that the noise equivalent power and detectivity of the fabricated IZO nanorod MSM PD were 1.42 × 10^-10 W and 1.44 × 10¹¹ cm·Hz^0.5·W^-1, respectively.

Original language	English
Article number	6589111
Pages (from-to)	2043-2046
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	21
DOIs	https://doi.org/10.1109/LPT.2013.2280719
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Low-frequency noise characteristics of in-doped ZnO ultraviolet photodetectors",

abstract = "We report the growth of vertically aligned indium-doped ZnO (IZO) nanorods on a glass substrate using a low-temperature hydrothermal method. An IZO nanorod metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) was also fabricated. It was found that the UV-to-visible rejection ratio of the fabricated PD was ~109 when biased at 1 V with a sharp cutoff at 390 nm. With an incident light wavelength of 390 nm and an applied bias of 1 V, it was found that measured responsivity of the PD was 2.5 A/W. Furthermore, it was also found that the noise equivalent power and detectivity of the fabricated IZO nanorod MSM PD were 1.42 × 10-10 W and 1.44 × 1011 cm·Hz0.5·W-1, respectively.",

author = "Chang, {Shoou Jinn} and Duan, {Bi Gui} and Hsiao, {Chih Hung} and Young, {Sheng Joue} and Wang, {Bo Chin} and Kao, {Tsung Hsien} and Tsai, {Kai Shiang} and Wu, {San Lein}",

year = "2013",

doi = "10.1109/LPT.2013.2280719",

language = "English",

volume = "25",

pages = "2043--2046",

journal = "IEEE Photonics Technology Letters",

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T1 - Low-frequency noise characteristics of in-doped ZnO ultraviolet photodetectors

AU - Chang, Shoou Jinn

AU - Duan, Bi Gui

AU - Hsiao, Chih Hung

AU - Young, Sheng Joue

AU - Wang, Bo Chin

AU - Kao, Tsung Hsien

AU - Tsai, Kai Shiang

AU - Wu, San Lein

PY - 2013

Y1 - 2013

N2 - We report the growth of vertically aligned indium-doped ZnO (IZO) nanorods on a glass substrate using a low-temperature hydrothermal method. An IZO nanorod metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) was also fabricated. It was found that the UV-to-visible rejection ratio of the fabricated PD was ~109 when biased at 1 V with a sharp cutoff at 390 nm. With an incident light wavelength of 390 nm and an applied bias of 1 V, it was found that measured responsivity of the PD was 2.5 A/W. Furthermore, it was also found that the noise equivalent power and detectivity of the fabricated IZO nanorod MSM PD were 1.42 × 10-10 W and 1.44 × 1011 cm·Hz0.5·W-1, respectively.

AB - We report the growth of vertically aligned indium-doped ZnO (IZO) nanorods on a glass substrate using a low-temperature hydrothermal method. An IZO nanorod metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) was also fabricated. It was found that the UV-to-visible rejection ratio of the fabricated PD was ~109 when biased at 1 V with a sharp cutoff at 390 nm. With an incident light wavelength of 390 nm and an applied bias of 1 V, it was found that measured responsivity of the PD was 2.5 A/W. Furthermore, it was also found that the noise equivalent power and detectivity of the fabricated IZO nanorod MSM PD were 1.42 × 10-10 W and 1.44 × 1011 cm·Hz0.5·W-1, respectively.

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

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M1 - 6589111

ER -

Low-frequency noise characteristics of in-doped ZnO ultraviolet photodetectors

Abstract

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