Low-frequency noise characteristics of ZnO nanorods schottky barrier photodetectors

Tse Pu Chen, Sheng Joue Young, Shoou-Jinn Chang, Chih Hung Hsiao, Liang Wen Ji, Yu Jung Hsu, San Lein Wu

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24 Citations (Scopus)

Abstract

A Schottky barrier photodetector with ZnO nanorods is fabricated on a glass substrate and the I-V characteristics are investigated. The ZnO nanorods are synthesized by an aqueous method, which allowed the fabricated Schottky barrier photodetector to be more sensitive in the UV region. Under 370-nm illumination, the photocurrent of the ZnO nanorod Schottky barrier photodetector is 6.56 μA and the UV-to-visible ratio is 780.8 at-1 V. In addition, the noise equivalent power and normalized detectivity (D) of the photodetector are 6.74,× 10-13W and 3.29,× 1011 cmHz0.5W-1 at-1m V, respectively.

Original languageEnglish
Article number6407675
Pages (from-to)2115-2119
Number of pages5
JournalIEEE Sensors Journal
Volume13
Issue number6
DOIs
Publication statusPublished - 2013 May 2

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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    Chen, T. P., Young, S. J., Chang, S-J., Hsiao, C. H., Ji, L. W., Hsu, Y. J., & Wu, S. L. (2013). Low-frequency noise characteristics of ZnO nanorods schottky barrier photodetectors. IEEE Sensors Journal, 13(6), 2115-2119. [6407675]. https://doi.org/10.1109/JSEN.2013.2238228