Low-frequency noise characterization of amorphous InGaZnO thin-film transistors with double-stack Ga2O3/SiO2 dielectric

T. H. Chang; C. J. Chiu; S. J. Chang; T. H. Yang; S. L. Wu; W. Y. Weng

doi:10.1149/2.0061410ssl

Low-frequency noise characterization of amorphous InGaZnO thin-film transistors with double-stack Ga₂O₃/SiO₂ dielectric

T. H. Chang, C. J. Chiu, S. J. Chang, T. H. Yang, S. L. Wu, W. Y. Weng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This letter reports the fabrication and characterization of amorphous indium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a double-stack Ga₂O₃/SiO₂ dielectric. The low-frequency noise characteristics of the devices are studied. With the double-stack Ga ₂O₃/SiO₂ dielectric, the leakage current of the TFTs is reduced and good transfer characteristics are obtained. Based on the carrier fluctuation model, the interface trap densities of a-IGZO TFTs with various SiO₂ thicknesses are evaluated. The trap density is found to decrease with increasing SiO₂ thickness. The results indicate that an SiO₂ interlayer with a moderate thickness can effectively suppress defects at the insulator/channel interface.

Original language	English
Pages (from-to)	Q55-Q58
Journal	ECS Solid State Letters
Volume	3
Issue number	10
DOIs	https://doi.org/10.1149/2.0061410ssl
Publication status	Published - 2014

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Low-frequency noise characterization of amorphous InGaZnO thin-film transistors with double-stack Ga2O3/SiO2 dielectric",

abstract = "This letter reports the fabrication and characterization of amorphous indium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a double-stack Ga2O3/SiO2 dielectric. The low-frequency noise characteristics of the devices are studied. With the double-stack Ga 2O3/SiO2 dielectric, the leakage current of the TFTs is reduced and good transfer characteristics are obtained. Based on the carrier fluctuation model, the interface trap densities of a-IGZO TFTs with various SiO2 thicknesses are evaluated. The trap density is found to decrease with increasing SiO2 thickness. The results indicate that an SiO2 interlayer with a moderate thickness can effectively suppress defects at the insulator/channel interface.",

author = "Chang, {T. H.} and Chiu, {C. J.} and Chang, {S. J.} and Yang, {T. H.} and Wu, {S. L.} and Weng, {W. Y.}",

year = "2014",

doi = "10.1149/2.0061410ssl",

language = "English",

volume = "3",

pages = "Q55--Q58",

journal = "ECS Solid State Letters",

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TY - JOUR

T1 - Low-frequency noise characterization of amorphous InGaZnO thin-film transistors with double-stack Ga2O3/SiO2 dielectric

AU - Chang, T. H.

AU - Chiu, C. J.

AU - Chang, S. J.

AU - Yang, T. H.

AU - Wu, S. L.

AU - Weng, W. Y.

PY - 2014

Y1 - 2014

N2 - This letter reports the fabrication and characterization of amorphous indium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a double-stack Ga2O3/SiO2 dielectric. The low-frequency noise characteristics of the devices are studied. With the double-stack Ga 2O3/SiO2 dielectric, the leakage current of the TFTs is reduced and good transfer characteristics are obtained. Based on the carrier fluctuation model, the interface trap densities of a-IGZO TFTs with various SiO2 thicknesses are evaluated. The trap density is found to decrease with increasing SiO2 thickness. The results indicate that an SiO2 interlayer with a moderate thickness can effectively suppress defects at the insulator/channel interface.

AB - This letter reports the fabrication and characterization of amorphous indium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a double-stack Ga2O3/SiO2 dielectric. The low-frequency noise characteristics of the devices are studied. With the double-stack Ga 2O3/SiO2 dielectric, the leakage current of the TFTs is reduced and good transfer characteristics are obtained. Based on the carrier fluctuation model, the interface trap densities of a-IGZO TFTs with various SiO2 thicknesses are evaluated. The trap density is found to decrease with increasing SiO2 thickness. The results indicate that an SiO2 interlayer with a moderate thickness can effectively suppress defects at the insulator/channel interface.

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M3 - Article

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JF - ECS Solid State Letters

IS - 10

ER -

Low-frequency noise characterization of amorphous InGaZnO thin-film transistors with double-stack Ga₂O₃/SiO₂ dielectric

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