Low-frequency noise in InP-based NnPnN double heterojunction bipolar transistors

Y. K. Su; S. C. Shei; C. H. Chen

doi:10.1063/1.107501

Low-frequency noise in InP-based NnPnN double heterojunction bipolar transistors

Y. K. Su, S. C. Shei, C. H. Chen

Institute of Computer and Communication Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This letter deals with the low-frequency noise in an InGaAs(P)/InP double heterojunction bipolar transistor at room temperature. The recombination is mainly responsible for the noise. The current dependence of the base noise with floating collector was of the form I_B³ and the shot noise of base current corresponding to 3.2×10^-24 A²/Hz for f=10 Hz. The current dependence of the collector noise with high frequency short circuited was of the form I_c^1.55 and the shot noise of collector current corresponding to 3.2×10^-24 A ²/Hz for f=10 Hz.

Original language	English
Pages (from-to)	1576-1578
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	13
DOIs	https://doi.org/10.1063/1.107501
Publication status	Published - 1992

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.107501

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title = "Low-frequency noise in InP-based NnPnN double heterojunction bipolar transistors",

abstract = "This letter deals with the low-frequency noise in an InGaAs(P)/InP double heterojunction bipolar transistor at room temperature. The recombination is mainly responsible for the noise. The current dependence of the base noise with floating collector was of the form IB3 and the shot noise of base current corresponding to 3.2×10-24 A2/Hz for f=10 Hz. The current dependence of the collector noise with high frequency short circuited was of the form Ic1.55 and the shot noise of collector current corresponding to 3.2×10-24 A 2/Hz for f=10 Hz.",

author = "Su, {Y. K.} and Shei, {S. C.} and Chen, {C. H.}",

year = "1992",

doi = "10.1063/1.107501",

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AU - Su, Y. K.

AU - Shei, S. C.

AU - Chen, C. H.

PY - 1992

Y1 - 1992

N2 - This letter deals with the low-frequency noise in an InGaAs(P)/InP double heterojunction bipolar transistor at room temperature. The recombination is mainly responsible for the noise. The current dependence of the base noise with floating collector was of the form IB3 and the shot noise of base current corresponding to 3.2×10-24 A2/Hz for f=10 Hz. The current dependence of the collector noise with high frequency short circuited was of the form Ic1.55 and the shot noise of collector current corresponding to 3.2×10-24 A 2/Hz for f=10 Hz.

AB - This letter deals with the low-frequency noise in an InGaAs(P)/InP double heterojunction bipolar transistor at room temperature. The recombination is mainly responsible for the noise. The current dependence of the base noise with floating collector was of the form IB3 and the shot noise of base current corresponding to 3.2×10-24 A2/Hz for f=10 Hz. The current dependence of the collector noise with high frequency short circuited was of the form Ic1.55 and the shot noise of collector current corresponding to 3.2×10-24 A 2/Hz for f=10 Hz.

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ER -

Low-frequency noise in InP-based NnPnN double heterojunction bipolar transistors

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