Low-frequency noise in InP-based NnPnN double heterojunction bipolar transistors

Y. K. Su, S. C. Shei, Chin-Hsing Chen

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3 Citations (Scopus)

Abstract

This letter deals with the low-frequency noise in an InGaAs(P)/InP double heterojunction bipolar transistor at room temperature. The recombination is mainly responsible for the noise. The current dependence of the base noise with floating collector was of the form IB 3 and the shot noise of base current corresponding to 3.2×10-24 A2/Hz for f=10 Hz. The current dependence of the collector noise with high frequency short circuited was of the form Ic 1.55 and the shot noise of collector current corresponding to 3.2×10-24 A 2/Hz for f=10 Hz.

Original languageEnglish
Pages (from-to)1576-1578
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number13
DOIs
Publication statusPublished - 1992 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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