This letter deals with the low-frequency noise in an InGaAs(P)/InP double heterojunction bipolar transistor at room temperature. The recombination is mainly responsible for the noise. The current dependence of the base noise with floating collector was of the form IB3 and the shot noise of base current corresponding to 3.2×10-24 A2/Hz for f=10 Hz. The current dependence of the collector noise with high frequency short circuited was of the form Ic1.55 and the shot noise of collector current corresponding to 3.2×10-24 A 2/Hz for f=10 Hz.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1992|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)