Low frequency noise in quantum-well GexSi1-x PMOSFET's

J. Chang, D. K. Nayak, V. K. Raman, J. C.S. Woo, J. S. Park, K. L. Wang, C. R. Viswanathan

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


This paper describes the low frequency noise behaviour of a quantum-well GexSi1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (1/f) noise becomes important.

Original languageEnglish
Pages (from-to)19-22
Number of pages4
JournalMicroelectronic Engineering
Issue number1-4
Publication statusPublished - 1991 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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