Low frequency noise in quantum-well GexSi1-x PMOSFET's

J. Chang, D. K. Nayak, V. K. Raman, J. C.S. Woo, J. S. Park, K. L. Wang, C. R. Viswanathan

Research output: Chapter in Book/Report/Conference proceedingConference contribution


This paper describes the low frequency noise behavior of a quantum-well GexSi1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (1/f) noise becomes important.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsM. Ilegems, M. Dutoit
PublisherIEEE Computer Society
Number of pages4
ISBN (Electronic)0444890661
Publication statusPublished - 1991
Event21st European Solid State Device Research Conference, ESSDERC 1991 - Montreux, Switzerland
Duration: 1991 Sep 161991 Sep 19

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876


Conference21st European Solid State Device Research Conference, ESSDERC 1991

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality


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