@inproceedings{37d55a25f1f84be8bf0db7279cd72645,
title = "Low frequency noise in quantum-well GexSi1-x PMOSFET's",
abstract = "This paper describes the low frequency noise behavior of a quantum-well GexSi1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (1/f) noise becomes important.",
author = "J. Chang and Nayak, {D. K.} and Raman, {V. K.} and Woo, {J. C.S.} and Park, {J. S.} and Wang, {K. L.} and Viswanathan, {C. R.}",
note = "Publisher Copyright: {\textcopyright} 1991 Elsevier Science Publishers B.V. All rights reserved. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.; 21st European Solid State Device Research Conference, ESSDERC 1991 ; Conference date: 16-09-1991 Through 19-09-1991",
year = "1991",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "19--22",
editor = "M. Ilegems and M. Dutoit",
booktitle = "European Solid-State Device Research Conference",
address = "United States",
}